Selected page of Devices for Automotive
2
l Regulator
l High-side power switch
l Low-side power switch
l Motor driver IC
l Hall-Effect IC
l Custom IC
l Transistor
l MOS FET
l Rectifier Diode for alternator
l High-voltage diode for igniter
l Power Zener diode
l General-purpose diode
l LED (visible infrared)
Product Groups
| Parameter
Symbol
Unit
Conditions
Ratings
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Symbol
min
typ
max
Unit
Conditions
Ratings
(Ta=25 C)
Power supply voltage
Input terminal voltage
DIAG terminal voltage
Collector-emitter voltage
Power Dissipation
Input voltage
Input current
Operating power supply voltage
Quiescent circuit current
Thermal protection starting
temperature
Minimum load inductance
Open load detection resistor
Output transfer time
DIAG output voltage
DIAG output transfer time
(Ta=25 C unless otherwise specified)
Saturation voltage of output
transistor
Junction temperature
Operating temperature
Storage temperature
VB
VIN
VDIAG
VBopr
VBopr 14V, VIN 0V
IO 1.0A, VBopr 6 to 16V
IO 1.8A, VBopr 6 to 16V
VBopr 6 to 16V
VBopr 6 to 16V
VIN 5V
VIN 0V
VBopr 14V, VO VBopr -1.5V
VBopr 6 to 16V
VBopr 14V, IO 1A
VBopr 14V, IO 1A
VCC 6V
VCC 6V, IDD 2mA
VBopr 14V, IO 1A
VBopr 14V, IO 1A
V
5
12
6.0
30
| 29
| Parameter
Symbol
Unit
Conditions
Ratings
Absolute Maximum Ratings
(Ta=25 C)
Power supply voltage
Power Dissipation
Storage temperature
Channel temperature
Output avalanche capability
VB
PD
Tstg
Tch
EAV
V
W
C
C
mJ
Single pulse
40
Input terminal voltage
V(IN, SEL, B/U)
V
-0.5 to +6.5
Output terminal voltage (DC)
VOUT
V
50
Output terminal voltage (pulse)
VOUT
V
Output clamping (max 70V)
Output current (DC)
IOUT
A
2.9
Output current (pulse)
IOUT
A
Over current protection starting current
Diag output source current
VDIAG
V
6.5
Diag output voltage
IDIAG
mA
5
2.8
-40 to +150
150
80
Equivalent Circuit Diagram
Circuit Example
Timing Chart
External Dimensions (unit: mm)
Features
l DMOS 4ch output
l Allows ON/OFF using C-MOS logic level
l Built-in over current and thermal protection circuit and diagnostic function to
detect open load
l Built-in output status signals (over current, over heat and open load)
42
VB
(7)
VIN B
| Electrical Characteristics
Parameter
Symbol
min
typ
max
Unit
Conditions
Ratings
Power MOS FET output
leakage voltage
High-side Power MOS FET
output on-state voltage
Power MOS FET output
breakdown voltage
Delay time
BVOUT
IO=0.4A, VIN=10V
VO=500V
IO=100m A
VCC=10V, VM=400V
VCC=6 to 15V
VCC=10A, VIN=10V,
VM=85V, IO=0.41A
VCC=6 to 15V
V
500
0.18
0.26
100
m A
0.34
V
4.0
mA
0.8VCC
V
2.0
V
m s
0.2VCC
6
V
IOUT (off)
VOUT (on)
Lowside Power MOS FET
output on-state voltage
IO=0.4A, VGL=10V
0.18
0.26
0.34
V
VOUT (on)
Quiescent circuit current
VCC=6 to 15V
VCC=10V, VM=400V
3.0
4.0
mA
mA
ICC 1
ICC 2
ICC 3
VIH
VIL
td (on)
3.0
m s
td (off)
-40 to +125 C
15
VCC
Input voltage (Low level)
Operating voltage
Operating circuit current
Input voltage (High level)
Parameter
Symbol
Unit
Conditions
Ratings
Absolute Maximum Ratings
Power source voltage
Input voltage
Output voltage
Output current
Powe
| Symbol
Ratings
Unit
(Ta=25 C)
(Ta=25 C)
VCBO
80
Symbol
Test Conditions
Ratings
Unit
ICBO
12
VCC
(V)
6
RL
(W )
2
IC
(A)
10
VBB1
(V)
-5
VBB2
(V)
200
IB1
(mA)
-200
IB2
(mA)
0.2typ
ton
(m s)
1typ
tstg
(m s)
0.3typ
tf
(m s)
IEBO
m A
VEB 6V
100max
m A
VCB 80V
100max
V(BR) CEO
V
IC 25mA
60min
hFE
VCE 4V, IC 1A
40 to 320
VCE (sat)
V
IC 2A, IB 0.2A
0.5max
fT
MHz
VCE 12V, IE -0.2A
15typ
COB
pF
VCB 10V, f 1MHz
60typ
VCEO
V
V
60
VEBO
V
6
IC
A
4
IB
A
1
PC
W
25 (Tc=25 C)
Tj
C
150
Tstg
C
-55 to +150
Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics (common emitter)
n IC VCE Characteristics (typ.)
n PC Ta Derating
n IC VBE Temperature Characteristics (typ.)
n hFE IC Characteristics (typ.)
n hFE IC Temperature Characteristics (typ.)
n fT IE Characteristics (typ.)
n j-a t Characteristics
n Safe Operating Area (single pulse)
n VCE (sat) IB Characteristics
| Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics
0
1
2
3
n IC VCE Characteristics (typ.)
0
2
VCE (V)
1
3
0
2
1
4
3
0
0.5
1.0
1.5
n IC VBE Temperature Characteristics (typ.)
VBE (V)
0.01
0.05
0.1
3
0.5
1
n hFE IC Temperature Characteristics (typ.)
100
IC (A)
5000
1000
500
0.1
0.05
0.5
1
5
n ton tstg tf IC Characteristics (typ.)
0.3
0.5
5
1
10
Ic (A)
20
2
5
10
50
n Safe Operating Area (single pulse)
0.5
0.2
1
5
VCE (V)
10
(per element)
0.002
0.01
0.05
0.1
0.4
n VCE (sat) IB Temperature Characteristics
0
0.5
1
IB (A)
IB=1mA
2mA
3mA
VCE 12V
IB1 -IB2 5mA
VCE 4V
(IC 1A)
(VCE 4V)
0
50
150
100
n PT Ta Derating
0
10
5
Ta C)
15
Ta -55 C
25 C
75 C
125 C
Ta 125 C
75 C
25 C
-55 C
0.1
1
10
100
1000
5000
n j-a t Characteristics
0.1
0.5
1
5
10
t (ms)
20
Single pulse
5mA
4mA
Ta 125 C
75 C
25 C
-55 C
tstg
tf
ton
Symbol
Ratings
Uni
| Absolute Maximum Ratings
Electrical Characteristics
Symbol
Ratings
Unit
(Ta=25 C)
(Ta=25 C)
VDSS
50
Symbol
Test Conditions
Ratings
Unit
V(BR) DSS
ID 100m A, VGS 0V
50
min
typ
max
IGSS
m A
m A
VGS +20V
+10
IDSS
S
V
VDS 50V, VGS 0V
100
VTH
VDS 10V, ID 250m A
2.0
1.0
Re (yfs)
VDS 10V, ID 25A
20.0
RDS (ON)
mW
V
ns
ns
ns
ns
V
VGS 10V, ID 25A
Coss
Ciss
VDS 10V
f 1.0MHz
VGS 0V
Crss
td (on)
ID 25A
VDD 12V
RL 0.48W
VGS 10V
tr
td (off)
tf
VSD
ISD 50A, VGS 0V
9
11
pF
pF
pF
2000
1000
150
1.0
1.5
To be
defined
VGSS
V
V
20
45
135
ID
A
ID (pulse)*
A
60 (Tc=25 C)
PD
Tch
W
150
Tstg
C
C
-55 to +150
VGS -20V
-5
MOS FET FKV560S
96
External Dimensions TO220S
a
b
10.2 0.3
1.27 0.2
2.54 0.5
2.54 0.5
1.2 0.2
1.6
0.86
4.44 0.2
1.3 0.2
0.4 0.1
0.1
a) Part No.
b) Lot No.
(Unit: mm)
* PW 100m s, duty 1%
+0.2
-0.1
+0.2
-0.1
| 109
-40 to +150
Absolute Maximum Ratings
Electrical Characteristics
PR
(W)
VDC
(V)
IZSM
(A)
10ms
rectangular
wave
single shot
Tstg
Tj
VZ (V)
1mA
instantaneous
current
Part No.
Remarks
Surface-mount
type
External
dimensions
( C)
IR (H)
(mA)
max
IR
(m A)
max
SFPZ-68
50
1500
PZ 628
20
20
2
65
28±
3.0
28±
3.0
10
1.0
500
1.0
1
3
450
SPZ-G36
30
11
36±
3.6
5
0.1
2
(Ta=25 C)
Power Zener Diode
Fig. 1
Fig. 3
Fig. 2
External Dimensions (unit: mm)
1.3 0.05
0.2
10.0
C2
Cathode marking
6.5 0.4
2.3 0.4
5.4
4.9
4.1
5.4
a
b
c
0.4
0.8 0.1
0.8
1.5 max
0.1
0.55 0.1
0.55 0.1
1.15 0.1
2.29 0.5 2.29 0.5
0 to 0.25
2.9
a) Part No.
b) Polarity
c) Lot No.
4.5 0.2
0.2
0.4
0.4
0.2
2.0min
1.35
1.35
5.1
+0.4
-0.1
1.1
1.5
| Condition
IF (mA)
typ
max
typ
typ
SML11516C
SML1216C
SML1216W
SML1516W
SML16716CN
SML16716WN
SML1816W
SML19416W
SML12451W
SML16751WN
SML12460C
SML16760CN
SML19460C
SML72420C
SML78420C
SML79420C
Deep red
Pure green
Red
Green
Red
Green
Deep red
Pure green
Yellow
Yellow
Amber
Green
Orange
Green
Red
Green
Yellow
Red
Green
Yellow
Orange
Green
Red
Green
Amber
Green
Orange
Green
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
Red
Green
Red
Orange
Amber
Green
Orange
Green
Yellow
Red
Yellow
Orange
Red
Orange
Green
Yellow
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
2.0
2.0
1.9
2.0
1.9
2.0
2.0
2.0
1.7
2.4
1.7
2.4
1.9
2.0
1.9
2.0
1.9
2.0
1.7
2.4
1.9
2.0
1.7
2.4
1.9
2.0
1.9
2.0
1.9
2.0
1.9
2.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.2
3.0
2.2
3.0
2.5
2.5
2.5
2.5
2.5
2.5
2.2
3.0
2.5
2.5
2.2
3.0
2.5
2.5
2.5
2.5
| Contents of this catalog are subject to change due to modification
Sanken Electric Co., Ltd.
1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo
PHONE: 03-3986-6164
FAX: 03-3986-8637
Overseas Sales Offices
lAsia
Sanken Electric Singapore Pte. Ltd.
150 Beach Road, #14-03 The Gateway West,
Singapore 0718
PHONE: 291-4755
FAX: 297-1744
Sanken Electric Hong Kong Co., Ltd.
1018 Ocean Centre, Canton Road,
Kowloon, Hong Kong
PHONE: 2735-5262
FAX: 2735-5494
Sanken Electric Korea Co., Ltd.
SK Life B/D 6F,
168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea
PHONE: 82-2-714-3700
FAX: 82-2-3272-2145
lNorth America
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615, U.S.A.
PHONE: (508)853-5000
FAX: (508)853-7861
lEurope
Allegro MicroSystems Europe Limited.
Balfour House, Churchfield Road,
Walton-on-Thames, Surrey KT12 2TD, U.K.
PHONE: 01932-253355
FAX: 01932-246622
PRINTED in JAPAN
H1-C01EC0-0110015TA
|
|