79 results for 4 0 united found in 0.000 seconds

specified) VIN VIN =12 to 16V, IO 0.4A IO 0.4A IO 1.0A IO=0.4A, VIN =6 to 16V ... IO =0 to 0.4A IO=5mA, Ta -10 to +100 C IO =0A VC 2.7V ... VC 0.4V f =100 to 120Hz 6 2 30 1 V 4.90 5.00 5.10 V 0.5 1.0 V V 30 mV 0.5 ... 100 mV 54 3 dB 10 mA 1.2 A 2.0 V 0.8 V 20 0.3 m A mA VO VDIF D VO LINE D VO ... Line Regulation Load Regulation * 3 * 4 Parameter Symbol Unit Conditions ... V A W W C C C C/W C/W 35 VIN 1.0 18 1.5 - 40 to +125 - 40 to +100 - 40 ... Diagram Features l Output current of 1.0A l 5-terminal type output on/off control ... of 2% l Low dropout voltage 1V at IO 1.0A, 0.5V at IO 0.4A l Built-in overcurrent ...

circuit current (Tj=25 C, VIN=14V, IO=0.5A unless otherwise specified) VIN IO 0.5A ... IO 0.8A VIN=8 to 16V IO=0 to 0.5A IO=0A f=100 to 120Hz 6 30 V 4.90 5.00 5.10 ... V 0.5 1.0 V V 30 mV 100 mV 54 3 dB 10 mA 0.9 A ... heatsink A W W C C C C/W C/W 35 0.8 22 1.8 -40 to +150 -40 to +100 -40 to + ... Features l 3-terminal IC regulator with 0.8A output current l Voltage accuracy of 2 ... % l Low Dropout voltage 0.5V at IO 0.5A, 1V at IO 0.8A l Built-in dropping type ... l TO220 equivalent full-mold package 4 P1.7 0.15 6.8 0.15 10 0.2 4.2 0.2 2.8 0 ... .2 2.6 0.15 3.2 0.2 0.94 0.15 0.45 a b Terminal connections 1. VIN 2. (NC ...

thermal resistance VIN VINB VC VIN IO=0.05A IO=0.3A IO1 0.05A IO2 0.4A VIN=6 to 18V ... , IO=0.05A IO1=0 to 0.05A VIN=6 to 18V, IO=0.3A IO2=0 to 0.3A IO1 ... =0A, VC=0V VC=4.8V VC=3.2V f=100 to 120Hz f=100 to 120Hz ... IO1 =0 to 0.05A IO2 =0 to 0.3A 6 35 V 4.80 5.00 5.20 V 4.80 5.00 5.20 V -0.1 0 ... .1 V 1.0 V 1.0 V 10 30 mV 10 30 mV 30 70 mV 40 70 mV ... 54 dB 54 dB 0.8 mA 0.1 A 0.5 A 4.2 4.5 4.8 V 3.2 3.5 3.8 V 100 m A -100 m A 35 V ... heatsink V A A W W C C C C/W C/W 40 -13 VIN 0.07 0.4 18 1.5 -40 to +125 - ...

Single input dual output sub output (5V/0.04A), main output (5V/0.1A) l Main output ... power supply l Low standby current 0.8mA) l Low dropout voltage 1V l Built-in ... thermal resistance VIN VINB VC VIN IO 0.04A IO 0.1A IO1 0.04A IO2 0.1A VIN 6 to 30V ... , IO 0.04A IO1 0 to 0.04A VIN 6 to 30V, IO 0.1A IO2 0 to 0.1A IO1 ... 0A, VC 0V VC 4.8V VC 3.2V f 100 to 120Hz f 100 to 120Hz ... IO1 =0 to 0.04A IO2 =0 to 0.1A 6 30 V 4.80 5.00 5.20 V 4.80 5.00 5.20 V -0.1 0 ... .1 V 1.0 V 1.0 V 10 50 mV 10 50 mV 30 70 mV 40 70 mV ... 54 dB 54 dB 0.8 mA 0.06 A 0.15 A 4.2 4.5 4.8 V 3.2 3.5 3.8 V 100 m A -100 m A ...

VIN IO VSWOUT VO VIN 8 to 18V VSSL 0.2V VIN 0V 4.80 5.00 82 50 60 5 3.1 5.20 ... 100 V 50 mV 0.2 25 200 35 V 15 m A kW mV VO LINE ... VO LOAD Efficiency IO 0.5 to 3A % Oscillation frequency 70 kHz ... fOSC Quiescent circuit current IO 0A 10 mA Iq Overcurrent protection ... V W W C C C/W C/W 35 3 -1 22 1.8 -40 to +150 -40 to +125 5.5 66.7 Notes: * ... pulled up in the IC. a b 1 2 3 4 5 10.0 3.2 0.95 0.85 P1.7 4 6.8 4.2 0 ... .2 2.8 0.2 2.6 0.1 3.9 8.2 0.7 0.7 0.45 -0.1 +0.2 -0.1 +0.2 (4.3) 1. VIN 2. ... SWOUT 3. GND 4. VS 5. SS a: Part No. b: Lot No. ( ... IO Top V A Ta PD characteristics C 8 0.5 -40 18 3 +85 14 Switching Type ...

VB VIN VDIAG VBopr VBopr 14V, VIN 0V IO 1.0A, VBopr 6 to 16V IO 1.8A, VBopr ... 6 to 16V VBopr 6 to 16V VIN 5V VIN 0V VBopr 14V, VO VBopr -1.5V VBopr 6 to ... 14V, IO 1A VBopr 14V, IO 1A V 5 12 6.0 30 mA 0.5 V 1.0 V VB V 0.8 V 1 mA 145 ... 30 8 30 15 30 6 0.3 30 30 mA 125 C kW m s m s V V m s m s ... Iq Output leak current VCEO 16V 2.0 -0.3 -0.1 2 mA IO, leak VCE (sat) VIH VIL ... current 1.9 A IS Ropen TON TOFF 4.5 1 VDH VDL TPLH TPHL mH L VCE PD1 PD2 Tj ... heatsink (Tc 25 C) V V W W C C C 40 -0.3 to VB 6 40 Output current IO A 1 ... .8 18 1.5 -40 to +125 -40 to +100 -40 to +125 Standard Circuit Diagram ... mica SI-5151S PZ DIAG 5.1kW GND 1 4 3 5 2 VIN VIN VO H H L L VO VCC VB LS ...

VB VIN VDIAG VBopr VBopr 14V, VIN 0V IO 1.0A, VBopr 6 to 16V IO 1.8A, VBopr ... 6 to 16V VBopr 6 to 16V VIN 5V VIN 0V VBopr 14V, VO VBopr -1.5V VBopr 6 to ... 14V, IO 1A VBopr 14V, IO 1A V 5 12 6.0 30 mA 0.5 V 1.0 V VB V 0.8 V 1 mA 30 ... 8 30 15 30 100 0.3 30 30 mA 150 C kW m s m s m A V m s m ... s Iq Output leak current VCEO 16V, VIN 0V 2.0 -0.3 -0.1 2 mA IO, leak VCE (sat) ... alone without heatsink V V W W C C C 40 -0.3 to VB 6 40 Output current IO A 1 ... .8 22 1.8 -40 to +150 -40 to +100 -40 to +150 Note: The rule of protection ... mica SI-5152S PZ DIAG 5.1kW GND 1 4 3 5 2 VIN VIN VO H H L L VO VCC VIN ... Function] SI-5152S 1. GND 2. VIN 3. VO 4. DIAG 5. VB a: Part No. b: Lot No. ( ...

VB VIN VDIAG VBopr VBopr 14V, VIN 0V IO 1.0A, VBopr 6 to 16V IO 2.5A, VBopr ... 6 to 16V VBopr 6 to 16V VIN 5V VIN 0V VBopr 14V, VO VBopr -1.5V VBopr 6 to ... 14V, IO 1A VBopr 14V, IO 1A V 5 12 6.0 30 mA 0.3 V 0.72 V VB V 0.8 V 1 mA 30 ... 8 30 15 30 6 0.3 30 30 mA 4.5 1 C kW m s m s V V m s m s Iq Output ... leak current VCEO 16V, VIN 0V 2.0 -0.3 -0.1 2 mA IO, leak VCE (sat) VIH VIL IIH IIL ... heatsink V V W W C C C -13 to +40 -0.3 to VB 6 40 Output current IO A 2.5 22 ... 1.8 -40 to +150 -40 to +100 -40 to +150 Note: The rule of protection ... terminal. SI-5155S PZ DIAG 5.1kW GND 1 4 3 5 2 VIN VIN VO H H L L VO VCC VB LS ... ] SI-5155S 20 1. GND 2. VIN 3. VO 4. DIAG 5. VB a: Part No. b: Lot No. ( ...

VB VIN VDIAG VBopr VBopr 14V, VIN 0V IO 2.05A, VBopr 6 to 16V VBopr 6 to 16V ... VBopr 6 to 16V VIN 5V VIN 0V VBopr 14V, VO VBopr -1.5V VBopr 6 to ... 1A VBopr 14V, IO 1A IC 5mA V 5 12 6.0 30 mA 0.47 V VB V 0.8 V 1 mA 30 8 30 ... 15 30 6 0.3 30 30 40 34 28 1 mA 150 4.5 C kW m s m s V V m s m s Iq Output ... leak current VCEO 16V, VIN 0V 2.0 -0.3 -0.1 2 mA IO, leak VCE (sat) VIH VIL IIH IIL ... protection starting current 2.05 A IS Ropen TON TOFF VDH VDL Minimum ... V V W W C C C -13 to +40 -0.3 to VB 6 VB VZ Output current IO A 2. ... 04 22 1.8 -40 to +150 -40 to +100 -40 to +150 Note: *1. The Zener diode for ... mica SI-5153S DIAG 5.1kW GND 1 4 3 5 2 VIN VIN VO H H L L VO VCC VIN ...

VB VIN VDIAG VBopr VBopr 14V, VIN 0V IO 1.0A, VBopr 6 to 16V VBopr 6 to 16V ... VBopr 6 to 16V VIN 5V VIN 0V VBopr 14V, VO VBopr -1.5V VBopr 6 to ... 1A VBopr 14V, IO 1A IC 5mA V 5 12 6.0 30 mA 0.3 V IO 2.5A, VBopr 6 to 16V 0. ... 72 V VB V 0.8 V 1 mA 30 8 30 15 30 6 0.3 30 30 40 ... 34 28 1 mA 150 4.5 C kW m s m s V V m s m s Iq Output ... leak current VCEO 16V, VIN 0V 2.0 -0.3 -0.1 2 mA IO, leak VCE (sat) VIH VIL IIH IIL ... V V W W C C C -13 to +40 -0.3 to VB 6 VB -VZ Output current IO A 2. ... 5 22 1.8 -40 to +150 -40 to +100 -40 to +150 Note: *1. The Zener diode for ... VB terminal. SI-5154S DIAG 5.1kW GND 1 4 3 5 2 VIN VIN VO H H L L VO VCC VB LS ...

VB VIN VDIAG VBopr Lo output VIN 5V VIN 0V VO VBopr -1.9V IO 1A IO 1A IO 1A IO 1A ... V 5 12 6.0 0.8 0 16 mA 1.0 100 mA 30 8 30 15 10 15 30 30 30 m A ... s m s m s Iq Threshold input voltage 3.0 V VINth IIN IIN Overcurrent protection ... voltage of DIAG output IDIAG 3mA 0.3 V VDL Saturation voltage of output ... transistor IO 1.0A, VBopr 6 to 16V 0.5 V VCE (sat) Output terminal sink ... current VO 0V, VIN 0V 2.0 mA IO (off) TON TOFF TPLH TPHL VB-D PD ... operating V V W C C C -13 to +40 -0.3 to +7.0 Drive terminal applied voltage ... VD V -0.3 to VB -0.3 to +7.0 DIAG output source current IDIAG mA 3 ... VB -0.4 Output current IO A 1.5 2.6 -40 to +150 -40 to +100 -40 to +150 Note: ...

temperature VB VIN IIN VB (opr) VIN=0V, VOUT=0V IO=1A IO=1A, Ta=80 C Ta= -40 to ... +105 C Ta= -40 to +105 C VIN=5V VIN=0V VOUT=VO-1.5V VOUT=0V RL=14W , VO= -5V ... , VO 10% VDG=5.5V IDG=1.6mA V 50 2.0 1.8 70 1 5.5 35 mA 200 mW 300 mW ... 3.0 V V 200 12 m A 165 5 3 4.5 70 3 140 35 0.15 70 45 90 ... 20 0.5 140 120 m A 155 1.5 C A V m s m s m A ... V m s Iq Output leak current VOUT=0V 1.4 1.0 100 m A IO, leak RDS (ON) VIHth ... V V Ta=25 C mA V V A W A C C C 35 -0.3 to 7 5 -0.3 to 7 DG terminal current ... drain Di forward current IDG mA 5 VB-45 1.8 2 0.8 150 -40 to +105 -40 to +150 ...

temperature VB VIN IIN VB (opr) VIN=0V, VOUT=0V IO=2A IO=1A, Ta=80 C VIN=5V ... VOUT=VO-1.5V VOUT=0V VDG=5.5V IDG=1.6mA V 50 2.0 1.8 70 ... 1 5.5 35 mA 150 mW 250 mW 3.0 V V m A 165 10 165 3 60 0.15 70 ... 45 20 155 C A V m s m s m A V m s Iq ... Output leak current VOUT=0V Ta= -40 to +105 C Ta= -40 to +105 C 1.0 m A IO ... V V Ta=25 C mA V V A W A C C C 35 -0.3 to 7 5 -0.3 to 7 DG terminal current ... drain Di forward current IDG mA 5 VB-45 2.5 2.7 0.8 150 -40 to +105 -40 to +150 ... supply voltage VIH VIL IO RIN RDG 5.5 4 -0.3 10 10 16 5.5 0.9 1.15 20 20 V V ... U 9 21 24 12 14,15 2,3 11 1 SPF5004 VB (4,5,6) 1.0 +0.1 -0.05 0.25 +0.15 -0.05 Fin ...

output transfer time (VBopr =14V, Tj= -40 to +150 C unless otherwise specified) ... 1.5V VBopr 6V IO 1A IO 1A IO 1A IO 1A V 0.8 19.3 1.0 2.5 34 34 1.6 6.0 16 mA 1.5 V ... Iq Circuit current (per circuit) mA IB 0.8 3.7 Threshold input voltage 3.0 V VINth ... 1.6 5.5 Minimum load inductance mH Lo 1.0 Maximum ON duty % D(ON) 0 A IS Ropen ... DIAG output IDGH -2mA, VBopr 6 to 16V 0.4 V VDL Saturation voltage of output ... transistor IO 1.2A, VBopr 6 to 16V 0.2 V VCE (sat) IO 1.5A, VBopr 6 to 16V V ... Tj 25 C, IC 10mA 39 V VB-O IC 5mA 40 V TON TOFF TPLH TPHL VB-O PD Tj TOP ... Lo output Input current VIN 5V VIN 0V 100 29 28 -1.0 mA m A IIN IIN Hi output ... , all circuits operating C 200pF, R 0W V V W C C C -13 to +40 -0.3 to +7.0 ...

temperature VB VIN IIN VB (opr) VIN=0V, VOUT=0V IO=1A IO=1A, Ta=80 C Ta= -40 to ... +105 C Ta= -40 to +105 C VIN=5V VIN=0V VOUT=VO-1.5V VOUT=0V RL=14W , VOUT=VB- ... , VB 10% VDG=5.5V IDG=1.6mA V 50 2.0 1.8 70 1 5.5 35 mA 200 mW 350 mW ... 3.0 V V 200 12 m A 165 5 3 4.5 70 3 140 35 0.15 70 45 90 ... 20 0.5 140 120 m A 155 1.5 C A V m s m s m A ... V m s Iq Output leak current VOUT=0V 1.4 1.0 100 m A IO, leak RDS (ON) VIHth ... operating mA V V A W A C C C 35 -0.3 to 7 5 -0.3 to 7 DG terminal current ... drain Di forward current IDG mA 5 VB-45 1.8 2.7 0.8 150 -40 to +105 -40 to +150 ...

temperature VB VIN VDIAG VBopr VIN 0V VIN 5V VIN 0V VO VBopr -1.9V IO 1A IO ... 1A IO 1A IO 1A V 5 12 6.0 0.8 0 16 mA 1.0 100 mA 30 8 30 15 10 15 30 30 30 m A ... s m s m s Iq Threshold input voltage 3.0 V VINth IIN IIN Overcurrent protection ... voltage of DIAG output IDIAG 3mA 0.3 V VDL Saturation voltage of output ... transistor IO 1.0A, VBopr 6 to 16V 0.5 V VCE (sat) Output terminal sink ... current VO 0V, VIN 0V 2.0 mA IO (off) TON TOFF TPLH TPHL PD Tj ... circuits operating V W C C C -13 to +40 -0.3 to +7.0 -0.3 to +7.0 DIAG output ... IDIAG mA 3 Output current IO A 1.2 4.8 -40 to +150 -40 to +100 -50 to +150 ... PNP transistor use (VCE (sat) 0.5V) l Allows direct driving using LS-TTL ...

avalanche capability VB VIN VBopr VIN 0V (all inputs) IO 1A RL 14W , IO 1A RL ... 1A RL 14W , IO 1A RL 14W , IO 1A V 5 0.4 0.5 0.6 0.7 50 7 5.5 25 mA 1.5 5.5 V ... VIN 5V (all inputs) 8 12 mA ICC 3.5 -0.5 VIN VIN IS Thermal protection starting ... temperature 151 165 1.1 41 Output rise time m s Tr Output fall ... (ovp) VF Output leak current VO 37V IF 0.5A 10 1.6 40 m A IOH Output clamp voltage ... Lo output Input current VIN 5V VIN 0V 50 m A m A IIN IIN Hi output Lo output ... V V W C C mJ Single pulse 40 -0.5 to +7.5 Output terminal voltage VOUT V ... 37 Output current IO A 1.8 2 -40 to +150 150 50 Equivalent Circuit ... Dimensions (unit: mm) Features l DMOS 4ch output l Allows ON/OFF using C-MOS ...

Tstg Tch EAV V W C C mJ Single pulse 40 Input terminal voltage V(IN, SEL, B/U) ... V -0.5 to +6.5 Output terminal voltage (DC) ... 6.5 Diag output voltage IDIAG mA 5 2.8 -40 to +150 150 80 Equivalent Circuit ... Dimensions (unit: mm) Features l DMOS 4ch output l Allows ON/OFF using C-MOS ... over current, over heat and open load) 42 VB (7) VIN B/U (17) VIN SEL (5) VIN 1 ( ... 6) VIN 2 (8) VIN 3 (18) VIN 4 (20) L-GND (19) VOUT1 (4) VOUT2 (9) ... 18 20 17 19 1, 2 11, 12 13, 14 23, 24 5 4 9 16 21 LG PG1 PG2 PG3 PG4 VIN1 ... otherwise specified) Iq VB=14V, VIN=0V VB=14V, VO=1A VB=14V VB=14V, RL=14W , ... 12 Power supply voltage VB (opr) V 5.5 40 mA 200 1.5 V 12 8 10 5 V V V V m s ... m s Id Input voltage (1 to 4, SEL, B/U) Input current (single circuit ...

capability VB VIN VCC (opr) VB=14V, VIN=0V VB=14V, VO=1A VB=14V VB=14V, RL=14W , ... IO=1A V 4 50 6 4.5 5.5 Power supply voltage VB (opr) V 5.5 ... 40 mA 1.5 5.5 V 12 8 10 5 V A V m s m ... VB=14V, VIN=5V 8 12 mA Id 3.5 -0.5 VIN VIN IS Thermal shutdown operating ... temperature 151 165 0.2 8 6 A 5 0.195 45 Output rise time m s Tr Output fall ... time m s Tf 0.205 Output-diag voltage ratio ra (DIAG) VB= ... 14V, VCC=5V, VO=40V VB=14V, VO=1 to 14V, Rdiag=500kW 4.85 ... Output leak current VB=14V, VCC=5V, VIN=0V, VO=40V, Ta=25 C VB=14V, VCC=5V, VIN=0V ... , VO=14V, Ta=25 C IF=1A 2.8 1.6 40 Overvoltage protection hysteresis ... ON resistance VB=14V, IO=1A, Ta=125 C 0.3 -30 W RDS (ON) VB=14V, IO=1A, Ta=25 C 0 ...

OUTA OUTA 4 5 STBY P-GND L-GND L-GND 9 8 1 C 12 ... 3 10 2 6 11 7 N.C. 4.7kW OUTB OUT B VS DIAG IA /A IB/B ZD: VS ... : mm) Stepper-motor Driver ICs SLA4708M 46 Features l High output breakdown ... Power Dissipation VS VO VIN VIL VIN 0.4V 2.4 50 0.8 50 V -0.8 mA V VIH IIL VIN 2 ... .4V IO 1A, Ta 25 C m A IIH Output ... 25 C VO 16V IDIAG 5mA VS 12V 1.5 100 0.3 V VO.STA Output leak current m A IO. ... Without heatsink V mA V C C W 35 50 -0.3 to +7 Output current Diagnostic output ... sink current IO, AVE A 1.5 10 7 -40 to +85 -40 to +150 3.5 (Ta=25 C) 1 2 3 ... 11 P2.54 0.7=27.94 1.0 31.5 max 0.85 1.2 0.15 31.0 0.2 24.4 0.2 16.4 0.2 3.2 ... 0.15 Ellipse 3.2 0.15 3.8 0.55 2.2 0.7 1.7 0.7 4.8 0.2 1.45 0.15 Pin 1 12 4 5 ...

VM IN1 IN2 PWM fPWM VIN IO=3A VM=40V VM=40V VIN1=VIN2=VPWM Brake mode VIN1= ... VIN2=VPWM VIN1=VIN2=VPWM=0V VIN1=VIN2=VPWM=5V IO=10A IO=3A IO=10A ... reverse mode C=1m F (typ) ID SINK=1mA V 0.3 6 18 V 100 m A 100 m A V 2.0 V 200 m ... A 22 1.0 0.8 1.0 0.8 22 16 0.3 m A V mA mA mA ms V V, VO-PG IO=3A VM= ... 24V (2 min.) 0.8 V Output transmission time Forward ... and source VPWM: L H (Vth=2.5V typ) 3.0 -100 10 15 10 m s m s m s V V V ... PW 1ms, Duty 50% kHz Hz W W C C C 40 -0.3 to 7 -0.3 to 7 -0.3 to 7 20 500 ... IO IO (p-p) A A 5 17 3.6 33.7 -40 to +150 -40 to +85 -40 to +150 Thermal ... Sanken's original package (SPM package) 48 Full Bridge PWM Control DC Motor Driver ...

breakdown voltage Delay time BVOUT IO=0.4A, VIN=10V VO=500V IO=100m A IO=2A, VIN= ... 10V VCC=10V, VM=400V VCC=4.5 to 15V VCC=10A, VIN=10V, VM=85A, IO=0. ... 41A VCC=4.5 to 15V V 500 0.28 0.4 1.4 2.0 100 m A 0.52 2.6 V V 4.0 mA 0. ... 8VCC V 1.4 V m s 0.2VCC V IOUT (off) VOUT (on) 1 VOUT (on) 2 ... MOS FET output on-state voltage IO=0.4A, VGL=10V IO=2A, VGL=10V 0.28 0.4 1.4 2. ... 0 0.52 2.6 V V VOUT (on) 1 VOUT (on) 2 ... Quiescent circuit current VCC=4.5 to 15V VCC=10V, VM=400V 3.0 4.0 mA mA ... 3 VIH VIL td (on) 3.3 m s td (off) -40 to +105 C 2.5 15 m s D t VCC Input ... W C C 500 15 500 15 5 (Ta=25 C) -40 to +125 -40 to +105 * Block Diagram ...

breakdown voltage Delay time BVOUT IO=0.4A, VIN=10V VO=500V IO=100m A VCC=10V, VM= ... 400V VCC=6 to 15V VCC=10A, VIN=10V, VM=85V, ... IO=0.41A VCC=6 to 15V V 500 0.18 0.26 100 m A 0.34 V 4.0 mA 0.8VCC V 2.0 ... V m s 0.2VCC 6 V IOUT (off) VOUT (on) Lowside ... MOS FET output on-state voltage IO=0.4A, VGL=10V 0.18 0.26 0.34 V VOUT (on) ... current VCC=6 to 15V VCC=10V, VM=400V 3.0 4.0 mA mA ICC 1 ICC 2 ICC 3 VIH ... VIL td (on) 3.0 m s td (off) -40 to +125 C 15 VCC Input voltage (Low ... 15 500 7 IO (peak) 15 5 (Ta=25 C) 40 (Tc=25 C) -40 to +125 -40 to +125 ... of High Voltage IC and Power MOS FETs (4 pieces) l High Voltage Driver which ...

Figure 1 (UA) Figure 4 (KA) Figure 2 (LT) Figure 3 (LH) 4.17 4 ... .04 1.57 1.47 3.10 2.97 2.01 15.24 MIN 0.43 3 2 1 0.41 1.27 BSC 0.79 0.38 45° 45° 4 ... .40 4.60 1.62 1.83 3.94 4.25 0.44 0.56 0.36 0.48 2.29 2.60 1.40 1.60 2.13 2.29 0.35 ... 0.44 1.50 BSC 3.00 BSC 0.89 1.20 1 3 2 6.45 6.32 4.65 4.50 1.96 1 ... 2 3 4 5 0.43 0.46 0.38 0.41 12.70 MIN 1.27 BSC 1.60 1.50 45° 3.0 0. ... 38 1 2 1.27 TYP 3 0.41 0.9 DIA 8.1 5.0MIN 9.0 3.90 9.0 2.0 3.0 0.38 1 2 1.27 TYP ... 3 0.41 0.9 DIA 8.0 7.0MIN 7.0 3.90 8.9 2.0 Figure 5 (SA) Figure 6 (SB ...

(unit: mm) 63 STA 10pin 25.25 4.0 31.0 4.0 4.0 31.0 SMA15pin SMA12pin 3GR-F 3GR-M ... SLA18pin 15.6 5.5 19.8 5.5 24.2 5.5 31.0 4.8 31.0 4.8 35 4.8 20.0 16 Pin 1 8 9 ... 12.05 16 15 14 13 12 11 10 9 1 2 3 ... 4 5 6 7 8 17.28 24 1 12 13 31.0 4.8 MT-100 FM205 5.0 10.0 4.2 15.6 20.2 4.0 ... STA 8pin 1.0 +0.1 -0.05 0.25 +0.15 -0.05 14.74 0.2 13.04 0.2 1.27 0.25 20 1 10 ... 11 0.4 +0.15 -0.05 Fin thickness Custom IC ...

) 5 VBB2 (V) -200 IB1 (mA) 200 IB2 (mA) 0.25typ ton (m s) 0.75typ tstg (m s) 0.25typ tf ... CEO V V IC -25mA -60min -80min hFE VCE -4V, IC -1A 40min VCE (sat) V IC -2A, IB -0. ... 2A -0.5max fT MHz VCE -12V, IE -0.2A 15typ COB pF VCB -10V, f 1MHz 90typ ... VCEO V V -60 -80 -80 VEBO V -6 IC A -4 IB A -1 PC W 25 (Tc 25 C) Tj C 150 ... typ.) Power Transistor 2SA1488/1488A 66 0.7 1 5 30 20 10 2 0 0 25 50 75 100 125 150 ... Without heatsink 10 50 100 3 5 -1 -0.5 -0.05 -0.1 -10 -5 Without heatsink ... 100 500 20 50 100 200 125 C 25 C -30 C 0.005 0.01 0.05 0.5 0.1 1 3 0 10 20 30 60 50 ...

Ratings Unit ICBO -24 VCC (V) 4 RL (W ) -6 IC (A) -10 VBB1 (V) 5 VBB2 ( ... V) -120 IB1 (mA) 120 IB2 (mA) 0.4typ ton (m s) 0.4typ tstg (m s) 0.2typ tf ( ... IC -6A 50min VCE (sat) V IC -6A, IB -0.3A -0.35max fT MHz VCE -12V, IE -0.5A ... 40typ COB pF VCB -10V, f 1MHz 330typ VCEO V ... (typ.) Power Transistor 2SA1567 67 0 0 -8 -4 -12 -6 -2 -10 -2 -1 -3 -4 -5 -6 ... VCE (V) -10 -50 -100 -3 -5 -1 -0.5 -0.05 -0.1 -30 -10 -5 VCE (V) Without ... heatsink natural air cooling 0 -1.5 -1.0 -0.5 -2 -100 -10 -1000 -3000 IB (mA) -0 ... .02 -0.1 -1 -10 30 50 100 500 IC (A) (VCE -1V) 0 ...

Ratings Unit ICBO -24 VCC (V) 4 RL (W ) -6 IC (A) -10 VBB1 (V) 5 VBB2 ( ... V) -120 IB1 (mA) 120 IB2 (mA) 0.4typ ton (m s) 0.4typ tstg (m s) 0.2typ tf ( ... IC -6A 50min VCE (sat) V V IC -6A, IB -0.3A -0.35max VFEC IECO -10A -2.5max fT MHz ... VCE -12V, IE 0.5A 40typ COB pF VCB -10V, f 1MHz 330typ VCEO V V ... (typ.) Power Transistor 2SA1568 68 0 0 -8 -4 -12 -6 -2 -10 -2 -1 -3 -4 -5 -6 - ... 10 -50 -100 -3 -5 -1 -0.5 -0.05 -0.1 -30 -10 -5 Without heatsink natural air ... cooling 0 -1.4 -1.0 -0.5 -7 -100 -10 -1000 -3000 -0.02 -0.1 -1 - ... 12 -10 2 10 300 100 -0.02 -0.1 -1 -12 -10 2 10 300 100 0.3 0.5 4 1 1 ...

5 VBB2 (V) 200 IB1 (mA) -200 IB2 (mA) 0.2typ ton (m s) 1typ tstg (m s) 0.3typ tf (m ... V(BR) CEO V IC 25mA 60min hFE VCE 4V, IC 1A 40 to 320 VCE (sat) V IC 2A, IB 0 ... .2A 0.5max fT MHz VCE 12V, IE -0.2A 15typ COB pF VCB 10V, f 1MHz 60typ VCEO ... V V 60 VEBO V 6 IC A 4 IB A 1 PC W 25 (Tc=25 C) Tj C 150 ... (typ.) Power Transistor 2SC3851 69 0 0 1 2 3 4 2 1 3 4 5 6 VCE (A) 30 20 ... 10 0 0 50 100 150 Ta C) Without heatsink 0 ... 1.0 0.5 0.005 0.01 0.1 0.05 1 0.5 IB (mA) 0.01 0.1 0.5 1 4 20 50 100 ... 500 IC (A) (VCE 4V) 0.5 1 5 1 10 100 1000 t (ms) 10 50 3 5 80 0 ...

Ratings Unit 20 VCC (V) 20 RL (W ) 1.0 IC (A) 10 VBB1 (V) -5 VBB2 (V) 15 IB1 ( ... mA) -30 IB2 (mA) 0.8typ ton (m s) 3.0typ tstg (m s) 1.2typ tf (m s) m A 10max ... V(BR) CEO V IC 25mA 60min hFE VCE 4V, IC 0.5A 500min VCE (sat) V IC 2A, IB ... 50mA 0.5max fT MHz VCE 12V, IE -0.2A 15typ COB pF VCB 10V, f 1MHz 50typ VCEO ... (typ.) Power Transistor 2SC3852 70 0 0 1 2 3 2 1 3 4 5 6 0.01 0.1 0.5 1 ... 3 100 500 2000 1000 (VCE=4V) 0.01 0.1 0.5 1 3 100 500 2000 1000 0.5 1 5 1 ... 100 1000 VCB 10V IE -2A 10 50 3 5 100 0.05 0.1 1 0.5 10 5 Without heatsink natural ...

Conditions Ratings Unit ICBO 20 VCC (V) 4 RL (W ) 5 IC (A) 0.1 IB1 (A) -0.1 IB2 ( ... A) 0.5typ ton (m s) 2.0typ tstg (m s) 0.5typ tf (m s) m A m A VCB 100V 10max IEBO ... V(BR) CEO V IC 25mA 50min hFE VCE 4V, IC 1A 300 to 1600 VCE (sat) V IC 5A, IB ... 0.1A 0.5max fT MHz VCB 12V, IE -0.5A 24typ COB pF VCB 10V, f 1MHz 150typ ... (typ.) Power Transistor 2SC4024 71 0 0 4 2 6 10 8 2 4 6 0 1.0 1.5 0.5 0.002 0 ... .01 0.1 2 1 0.02 0.1 0.5 5 1 10 100 500 1000 0.02 0.1 0.5 5 ... 1 10 100 500 1000 0.3 0.5 1 4 1 10 100 1000 10 50 3 5 100 0.2 1 ...

Conditions Ratings Unit ICBO 24 VCC (V) 4 RL (W ) 6 IC (A) 10 VBB1 (V) -5 VBB2 (V ... ) 0.12 IB1 (A) -0.12 IB2 (A) 0.6typ ton (m s) 1.4typ tstg (m s) 0.4typ tf ( ... 6A 50min VCE (sat) V V IC 6A, IB 1.3A 0.35max VFEC VECO 10A 2.5max fT MHz VCE 12V, IE ... -0.5A 24typ COB pF VCB 10V, f 1MHz 180typ ... (typ.) Power Transistor 2SC4065 72 0 0 4 2 8 6 12 10 2 4 6 0 1.0 1.3 0.5 0.005 ... 0.01 0.1 3 1 0.02 0.1 1 10 12 3 5 50 10 100 400 0.02 0.1 1 ... 1012 3 5 50 10 100 400 0.2 0.5 1 5 1 10 100 1000 10 50 3 5 100 0.05 0. ... 1 1 0.5 30 10 5 Without heatsink natural air ...

(W ) 3 IC (A) 10 VBB1 (V) -5 VBB2 (V) 0.3 IB1 (A) -0.6 IB2 (A) 0.5max ton (m s) ... 3max tstg (m s) 0.5max tf (m s) m A VCB 200V 100max IEBO m A ... V(BR) CEO V IC 50mA 120min hFE VCE 4V, IC 3A 70 to 220 VCE (sat) V V IC 3A, IB ... 0.3A 0.5max VBE (sat) IC 3A, IB 0.3A 1.2max fT MHz VCE 12V, IE -0.5A 30typ ... (typ.) Power Transistor 2SC4153 73 0 0 3 4 2 1 5 7 5 2 1 3 4 0 2 3 1 0.005 ... 0.01 0.1 2 1 0.01 0.1 0.5 1 7 5 20 50 100 300 (VCE 4V) 0.01 0.1 ... 0.5 1 7 5 20 50 100 300 0.2 0.5 1 5 1 10 100 1000 -0.01 -0.1 -1 -5 0 10 ...

CEO V IC 25mA hFE VCE 2V, IC 3A 330 to 430 VCE (sat) V IC 4A, IB 20mA 1.5max ... (typ.) Power Transistor 2SD2141 74 0 0 5 10 2 4 6 0 3 2 1 0.2 1 0.5 10 5 ... 200 100 50 1A 3A 5A IC 7A 0.02 0.1 1 0.5 10 5 5000 10000 1000 500 100 10 50 0.1 ... 1 5 0.5 1 10 100 1000 50 10 5 1 100 500 0.01 0.05 0.1 1 0.5 10 20 5 Without heatsink ... natural air cooling 40 30 20 10 2 0 0 25 50 75 100 125 150 Without heatsink 0 ... 10 5 0 2.0 2.4 1.0 0.02 0.1 1.0 5 0.5 10 5000 10000 1000 500 100 50 20 -0.05 ...

V) -5 VBB2 (V) 30 IB1 (mA) -30 IB2 (mA) 0.25 ton (m s) 0.8 tstg (m s) 0.35 tf (m s) ... to 3000 VCE (sat) V IC 1.5A, IB 15mA 0.15max VFEC V IFEC 6A 1.5max Es/b mJ L 10mH ... Tc=25 C) Tj C 150 Tstg C -55 to +150 0 1 2 3 4 5 n IC VCE Characteristics ... VBE Temperature Characteristics (typ.) 0 10 8 6 4 2 VCE (V) 0.01 0.05 0.1 1 0 ... 5000 1000 500 100 50 30 IC (A) (VCE 1V) 0.01 0.05 0.1 1 0.5 5 10 n hFE IC ... 1000 500 100 50 30 IC (A) (VCE 1V) -0.01 -0.05 -0.1 -1 -0.5 -5 -10 n fT IE ... Characteristics (typ.) 30 25 20 15 10 5 0 IE (A) 1 5 10 100 50 500 1000 n j-a t ...

=6A 150min VBE (sat) V IC=6A, IB=6mA 2.0max VCE (sat) V IC=6A, IB=6mA 1.5max ... TO220F (full-mold) B C E C0.5 10.0 2.2 2.6 4.2 2.8 1.35 1.35 0.85 2.54 2. ... 54 0.45 3.3 a b a) Part No. b) Lot No. (Unit: ...

Typical Switching Characteristics 0 1 2 3 4 0 8 6 4 2 VCE (V) 0.01 0. ... 05 0.1 1 0.5 5 8 500 100 30 50 IC (A) (VCE 4V) 0. ... 01 0.05 0.1 1 0.5 5 8 500 100 50 30 IC (A) (VCE 4V) -0.01 ... -0.05 -0.1 -1 -0.5 -5 -10 30 20 10 0 IE (A) 0.0002 0.01 0.001 0.1 1 10 100 ... 50 10 1 5 0.1 0.5 0.05 t (sec) (VCE 12V) 0 50 100 150 0 40 30 ... 20 10 Ta C) 3 5 10 50 200 100 20 10 1 0.1 0.5 5 VCE (V) 0 0.5 1.0 1.5 0 8 6 2 4 ... VBE (V) 5 10 50 100 500 2000 1000 0 2 1 IB (mA) IB 10mA 25mA natural air ...

0 -1 -2 -3 -4 -8 -6 -4 -2 0 VCE (V) -0.01 -0.05 -0.1 -1 -0.5 -5 -8 500 100 30 50 ... IC (A) (VCE -4V) 0.01 0.05 0.1 1 0.5 5 10 30 20 10 0 IE (A) 0.0002 0.01 0. ... 001 0.1 1 10 100 50 10 1 5 0.1 0.5 0.05 t (sec) (VCE 12V) 0 50 100 150 0 40 ... C) -3 -5 -10 -50 -150 -100 -12 -10 -1 -0.1 -0.5 -5 VCE (V) 0 -0.5 -1.0 -1.5 0 -8 - ... 6 -2 -4 VBE (V) -5 -10 -50 -100 -500 -2000 - ... 1000 0 -2 -1 IB (mA) IB -10mA -25mA -50mA ... heatsink Unit: mm Without heatsink Tc -40 C 25 C 75 C 125 C Ic -1A Ic -3A Ic -5A ...

IC=1A 105 VCE (sat) V IC=1.2A, IB=12mA 400 VCEO V V 115± 10 VEBO V 6 IC A IB A 1 ... to +150 VFEC V IFEC=6A ES/B mJ L=10mA 45 typ 115 0.08 800 1.25 10 max 10 125 ... 0.12 1500 1.5 6 (pulse 10) Power ... 79 External Dimensions TO220S a b 10.2 0.3 1.27 0.2 2.54 0.5 2.54 0.5 1.2 0.2 1.6 ... 0.86 -0.1 +0.2 -0.1 +0.2 4.44 0.2 1.3 0.2 0.4 0.1 0.1 a) Part No. b) Lot No. ( ...

CEO V IC=25mA hFE VCE=2V, IC=3A 330 to 430 VCE (sat) V IC=4A, IB=20mA 1.5max ... (typ.) Power Transistor MN638S 80 0 0 5 10 2 4 6 0 3 2 1 0.2 1 0.5 10 5 ... 200 100 50 1A 3A 5A IC 7A 0.02 0.1 1 0.5 10 5 5000 10000 1000 500 100 10 50 0.1 ... 1 10 100 0.1 1 0.01 0.001 10 0 10 5 0 2.0 2.4 1.0 0.02 0.1 1.0 5 0.5 10 5000 ... (V) 120mA 150mA IB (mA) VBE (V) (VBE =4V) t (s) (VCE 2V) (VCE 2V) IC (A) IC (A) ... Dimensions TO220S j-a j-c a b 10.2 0.3 1.27 0.2 2.54 0.5 2.54 0.5 1.2 0.2 1.6 ...

0 2 1 3 0 0.5 1 5 n VCE (sat) IC Temperature ... Characteristics IC (A) 1 10 100 400 n VCE (sat) IB Temperature ... Characteristics 0 0.25 0.5 IB (mA) IC/IB 100 (IC 0.5A) Ta 125 C 75 ... C 25 C -40 C Ta 125 C 75 C 25 C -40 C 0 50 150 100 0 10 Ta C) 20 Symbol ... mA VEB 6V 2.7max VCEO V IC 25mA 31 to 41 hFE VCE 4V, IC 0.7A 400min VCE (sat) V ... V IC 0.5A, IB 5mA IC 1A, IB 5mA 0.2max 0.5max VFEC RB RBE V W kW IFEC 2A 2.5max 800± ... 120 2.0± 0.4 Es/b mJ L 10mH, single pulse 50min VCEO ... (A) 10 VBB1 (V) -5 VBB2 (V) 5 IB1 (mA) 0 IB2 (mA) 1.0 ton (m s) 8.5 tstg (m s) 2 ... Switching Characteristics RB 3 2 4 5 6 7 8 1 RBE 0 1 4 5 2 6 3 n IC ...

Typical Switching Characteristics 0 1 2 3 n IC VCE Characteristics (typ ... .) 0 2 VCE (V) 1 3 0 2 1 4 3 0 0.5 1.0 1.5 n IC VBE Temperature ... Characteristics (typ.) VBE (V) 0.01 0.05 0.1 3 0.5 1 n hFE IC Temperature ... (typ.) 100 IC (A) 5000 1000 500 0.1 0.05 0.5 1 5 n ton tstg tf IC ... Characteristics (typ.) 0.3 0.5 5 1 10 Ic (A) 20 2 5 10 50 n Safe ... Operating Area (single pulse) 0.5 0.2 1 5 VCE (V) 10 (per element) 0.002 0.01 ... 0.05 0.1 0.4 n VCE (sat) IB Temperature ... Characteristics 0 0.5 1 IB (A) IB=1mA 2mA 3mA VCE 12V IB1 - ... IB2 5mA VCE 4V (IC 1A) (VCE 4V) 0 50 150 100 n PT Ta Derating 0 10 5 Ta C ...

0 1 4 5 2 6 3 n IC VCE Characteristics (typ ... .) 0 2 VCE (V) 1 3 0.01 0.1 4 0.5 1 n hFE IC Temperature Characteristics ... 50 100 IC (A) 3000 1000 500 0 0.5 1.0 1.5 2.0 n ton tstg tf IC ... Characteristics (typ.) 0.1 0.5 5 1 10 Ic (A) 50 1 5 10 50 n Safe ... Operating Area (single pulse) 0.5 0.1 1 5 VCE (V) (per element) IB 1mA 2mA ... 3mA VCC 12V IB 5mA -IB 0A (VCE 4V) 0 50 150 100 n PT Ta Derating 0 10 Ta C) ... 20 0 2 1 3 0 0.5 1 5 n VCE (sat) IC Temperature ... Characteristics IC (A) 1 10 100 400 n VCE (sat) IB Temperature ... Characteristics 0 0.25 0.5 IB (mA) IC/IB 100 (IC 0.5A) Ta 125 C 75 ...

0 1 2 5 3 4 n IC VCE Characteristics (typ.) 0 5 4 3 ... 2 VCE (V) 1 7 6 0 0.25 0.75 0.5 0.01 0.1 1 10 n VCE (sat) IC Temperature ... Characteristics (typ.) IC (A) 0.01 0.1 10 1 n hFE IC Temperature ... (typ.) 50 IC (A) 2000 1000 500 100 0 1 2 3 n ton tstg tf IC ... Characteristics 0.1 0.5 1 Ic (A) 5 1 5 10 50 100 n Safe ... Operating Area (single pulse) 0.5 0.1 1 5 VCE (V) 20 10 0 0.5 1.0 1.5 n IC ... VBE Temperature Characteristics (typ.) 0 6 5 4 3 2 1 VBE (V) IB 1mA 3mA VCC 12V ... -IB2 30mA IC/IB 100 (VCE 1V) (VCE 1V) 0 50 150 100 0 10 15 5 Ta C) 20 Ta -55 ...

Typical Switching Characteristics 0 1 2 6 5 3 4 0 5 4 3 2 VCE (V) 1 8 7 ... 6 0 0.25 0.75 0.5 0.01 0.1 1 5 IC (A) 0.01 0.1 10 1 30 50 IC ( ... A) 2000 1000 500 100 0 1 2 3 0.1 0.5 1 Ic (A) 10 5 (Tc 25 C) 0 0.5 1.0 1. ... 5 0 7 6 5 4 3 2 1 VBE (V) IB 1mA 3mA VCC 12V IB1 - ... IB2 30mA IC/IB 100 (VCE 1V) (VCE 4V) 0 50 150 100 0 10 5 Ta C) 20 15 Ta -55 ... C 25 C 75 C 150 C 0 0.25 0.75 0.5 1 10 100 1000 IB (mA) IC 1.2A Ta 150 ... C 25 C -55 C Ta 150 C 75 C 25 C -55 C 0.0001 1 0.1 0.01 0.001 10 100 1000 0.1 0. ...

VCEO V IC=50mA 60 hFE VCE=1V, IC=1A 400 VCE (sat) V IC=1.5A, IB=15mA VFEC V ... IFEC=6A Es/b mJ L=10mH 80 65 800 0.09 1.25 10 max typ min 10 70 1500 ... 0.15 1.5 VCEO V V 65± 5 VEBO V 6 IC A 6 ( ... pulse 10) 20 (Tc=25 C) 4 (Ta=25 C) IB A 1 PC W Tj C 150 Tstg ... C -55 to +150 3 2 1 5 4 7 6 9 8 10 Power Transistor Array ... . b) Lot No. (Unit: mm) 9 2.54= (22.86) 0.05 a b (2.54) 25.25 0.2 0.5 0.15 1.0 0.25 ... C1.5 0.5 1 3 2 4 B B C B C C E 5 6 7 10 B 8 9 C E ...

1V, IC 3A 150min VCE (sat) V IC 6A, IB 0.3A 0.35max VFEC V IFEC 10A 2.5max VCB - ... VCE -1V, IC -3A 80min IC -6A, IB -0.3A -0.35max IFEC 10A 2.5max VCEO V V 60 ... A IB A 3 PT W W 5 (Tc=25 C, No Fin) 40 (Tc=25 C) Tj 150 Tstg C C -55 to +150 ... 8 4 9 7 10 3 6 12 11 1 2 R1: 500W Typ. R2: ... a) Part No. b) Lot No. (Unit: mm) 3.2 0.15 3.8 11 P2.54 0.1= (27.94) 3.2 0.15 31 0 ... .2 4.8 0.2 1.7 0.1 2.45 0.2 4 (R1) R-end 4 0.7 24.4 0.2 1.2 0.15 0.85 ... 1.45 0.15 31.3 0.2 16.4 0.2 (Root dimension) (Root dimension) +0.2 ... -0.1 0.55 1 2 3 4 5 6 7 8 9 10 12 11 a b External ...

0 -1 -2 -3 -4 -5 n IC VCE Characteristics 0 -5 -6 VCE ... (V) -4 -3 -2 -1 0 50 100 150 n PT Ta Derating 0 3 2 1 ... Ta C) 4 0.001 0.01 0.1 1 2 n j-a t Characteristics 0.3 1 5 ... n Safe Operating Area (single pulse) -0.1 -0.5 -10 -1 VCE (V) -20 -0.05 -1 -0.1 - ... ) IC Temperature Characteristics (typ.) 0 -1 -2 IC (A) -3 IB -5mA -10mA -20mA - ... -50mA IC/IB 20 Ta 25 C Single pulse 0 -0.5 -1.0 -1.5 n IC VBE Temperature ... Characteristics (typ.) 0 -5 -4 -3 -2 -1 -6 VBE (V) (VCE -4V) Without ... V) 5 VBB2 (V) -50 IB1 (mA) 50 IB2 (mA) 0.4 ton (m s) 1.75 tstg (m s) 0.22 tf (m s ... -10max VCEO V IC -25mA -60min hFE VCE -4V, IC -2A 100min VCE (sat) V IC -2A, IB -0 ...

0 50 100 150 0 3 2 1 Ta C) 4 Without heatsink Symbol Ratings Unit ( ... V) 5 VBB2 (V) -50 IB1 (mA) 50 IB2 (mA) 0.4 ton (m s) 1.75 tstg (m s) 0.22 tf (m s ... -10max VCEO V IC -25mA -60min hFE VCE -4V, IC -2A 100min VCE (sat) V IC -2A, IB - ... 0.1A -0.4max VCEO V V -60 VEBO V -6 IC A -6 ( ... -mount Power Transistor Array SDA04 89 0 -1 -2 -3 -4 -5 n IC VCE Characteristics ... 0 -5 -6 VCE (V) -4 -3 -2 -1 0.05 1 0.5 0.1 5 -0.5 -0.1 -0.5 -1 -5 -10 n ton tstg ... tf IC Characteristics IC (A) -0.01 -0.1 -1 -10 n hFE IC Temperature ... 30 100 50 500 IC (A) 1000 0.001 0.01 0.1 1 2 n j-a t Characteristics 0.3 1 5 ...

14 1 3 4 13 15 16 2 11 5 6 8 9 10 12 7 ... V IC 50mA 60 to 70 hFE VCE 1V, IC 1A 400 to 1500 VCE (sat) V IC 1.5A, IB 15mA 0. ... ) Part No. b) Lot No. (Unit: mm) a b 20.0max 2.54 0.25 0.89 0.15 0.25 19.56 0.2 0.75 ... 0.3 +0.15 -0.05 16 Pin 1 8 9 External Dimensions SMD- ... 16A Equivalent Circuit Diagram +0.15 -0.05 0 50 -50 100 150 0 3 2 1 Ta C) 6 5 ... 50 50 1.6mm Use substrate 42 31 1.0mm Use substrate n PT Ta Derating 0 1 2 3 ... 4 5 n IC VCE Characteristics 0 5 6 7 8 VCE (V) 4 3 2 1 1 0.1 10 0 0.5 ... 1.0 1.5 2.0 2.5 3.0 n ton tstg tf IC Characteristics IC (A ... ) 0.01 0.1 1 10 n hFE IC Temperature ...

1.0 +0.1 -0.05 0.25 +0.15 -0.05 14.74 0.2 13.04 0.2 1.27 0.25 20 1 10 11 0.4 +0. ... 15 -0.05 a b F1 3 18,19 F2 8 12,13 Surface-mount ... 6V VCEO V IC=50mA 105 hFE VCE=1V, IC=1A 400 VCE (sat) V IC=1.2A, IB=12mA VFEC V ... IFEC=6A Es/b mJ L=10mH 45 115 800 0.08 1.25 10 max typ min 10 125 1500 ... 0.12 1.5 VCEO V V 115± 10 VEBO V 6 IC A ... (FR4) 70mm 100mm 1.6mm 11 20 F1 F2 (2.4) (11.43) 4-( 0.8) (13.54) 10 1 a) Part ...

Ratings Unit (Ta=25 C) (Ta=25 C) VDSS 450 Symbol Test Conditions Ratings Unit V( ... BR) DSS ID 100m A, VGS 0V 450 min typ max IGSS nA m A VGS 30V 100 ... IDSS S V VDS 450V, VGS 0V 100 VTH VDS 10V, ID 1mA 4.0 2.0 3.0 5 ... W V ns ns ns ns V Coss Ciss VDS 10V f 1.0MHz VGS 0V Crss td (on) ID 3.5A VDD 200V ... VGS 10V tr td (off) tf VSD ISD 7A, VGS 0V 0.84 1.10 pF pF pF 720 150 65 25 40 ... 70 50 1.0 1.5 VGSS V V 30 7 28 ID ID (pulse)* ... 30V, L 5mH, IL 7A, unclamped, RG 50W 0 10 20 7 1 0 Drain-source voltage VDS (V ... ) n ID VDS Characteristics 4 5 6 2 3 5 15 5.5V 5V VGS 10V 0 0 1 7 4 ... 5 6 0.4 0.6 0.8 0.2 1.0 -50 0 0 50 100 150 0.5 1.0 2.0 1.5 2.5 4 1 5 10 ...

Unit (Ta=25 C) (Ta=25 C) VDSS 40 Symbol Test Conditions Ratings Unit V( ... BR) DSS ID 100m A, VGS 0V 40 min typ max IGSS m A m A VGS +20V VGS - ... 10V +10 -5 IDSS S V VDS 40V, VGS 0V 100 VTH VDS 10V, ID 250m A 2.3 1.3 Re ( ... V VGS 10V, ID 25A Coss Ciss VDS 10V f 1.0MHz VGS 0V Crss td (on) ID 25A VDD 12V RL 0 ... .48W VGS 10V tr td (off) tf VSD ISD 50A, VGS ... 0V 6 9 pF pF pF 2000 1200 200 1.0 1.5 To be defined VGSS V V +20, -10 ... 60 180 ID A ID (pulse)* A 40 (Tc=25 C) PD Tch W 150 Tstg C C -55 ... TO220F (full-mold) G D S a b 3.3 0.2 10.0 0.2 1.35 0.15 1.35 0.15 0.85 2.54 ... 2.54 0.45 2.4 0.2 4.2 0.2 C 0.5 2.8 +0.2 -0.1 +0.2 -0.1 2.2 0.2 ...

Unit (Ta=25 C) (Ta=25 C) VDSS 40 Symbol Test Conditions Ratings Unit V( ... BR) DSS ID 100m A, VGS 0V 40 min typ max IGSS m A m A VGS +20V +10 ... VGS -10V -5 IDSS S V VDS 40V, VGS 0V 100 VTH VDS 10V, ID 250m A 2.3 1.3 Re ... (yfs) VDS 10V, ID 25A 20.0 RDS (ON) mW V ns ns ns ns V VGS 10V, ID ... 25A Coss Ciss VDS 10V f 1.0MHz VGS 0V Crss td (on) ID 25A VDD 12V RL 0.48W ... VGS 10V tr td (off) tf VSD ISD 50A, VGS 0V 7 9 pF pF pF 2800 1400 600 20 600 ... 250 100 1.0 1.5 VGSS V V +20, -10 60 180 ID A ID ... mm) External Dimensions TO220S a b 10.2 0.3 1.27 0.2 2.54 0.5 2.54 0.5 1.2 0.2 1.6 ...

Ratings Unit V(BR) DSS ID 100m A, VGS 0V 50 min typ max IGSS m A m A VGS +20V + ... 10 IDSS S V VDS 50V, VGS 0V 100 VTH VDS 10V, ID 250m A 2.5 1.0 Re ( ... V VGS 10V, ID 25A Coss Ciss VDS 10V f 1.0MHz VGS 0V Crss td (on) ID 25A VDD 12V RL 0 ... .48W VGS 10V tr td (off) tf VSD ISD 50A, VGS ... 0V 9 11 pF pF pF 2700 1100 500 20 ... 600 300 100 1.0 1.5 VGSS V V +20, -10 60 180 ID A ID ... TO220F (full-mold) G D S a b 3.3 0.2 10.0 0.2 1.35 0.15 1.35 0.15 0.85 2.54 ... 2.54 0.45 2.4 0.2 4.2 0.2 C 0.5 2.8 +0.2 -0.1 +0.2 -0.1 2.2 0.2 * PW 100m s, ...

Ratings Unit V(BR) DSS ID 100m A, VGS 0V 50 min typ max IGSS m A m A VGS +20V + ... 10 IDSS S V VDS 50V, VGS 0V 100 VTH VDS 10V, ID 250m A 2.0 1.0 Re ... (yfs) VDS 10V, ID 25A 20.0 RDS (ON) mW V ns ns ns ns V VGS 10V, ID ... 25A Coss Ciss VDS 10V f 1.0MHz VGS 0V Crss td (on) ID 25A VDD 12V RL 0.48W ... VGS 10V tr td (off) tf VSD ISD 50A, VGS 0V 9 11 pF pF pF 2000 1000 150 1.0 1.5 ... To be defined VGSS V V 20 45 135 ID A ID (pulse)* A 60 (Tc=25 C) ... 96 External Dimensions TO220S a b 10.2 0.3 1.27 0.2 2.54 0.5 2.54 0.5 1.2 0.2 1.6 ... 0.86 4.44 0.2 1.3 0.2 0.4 0.1 0.1 a) Part No. b) Lot No. (Unit: mm) * PW ...

Ratings Unit V(BR) DSS ID 100m A, VGS 0V 60 min typ max IGSS m A m A VGS +20V + ... 10 IDSS S V VDS 60V, VGS 0V 100 VTH VDS 10V, ID 250m A 2.0 1.0 Re ( ... yfs) VDS 10V, ID 25A 20.0 RDS (ON) mW V ns ns ns ns V VGS 10V, ID ... 25A Coss Ciss VDS 10V f 1.0MHz VGS 0V Crss td (on) ID 25A VDD 12V RL 0.48W ... VGS 10V tr td (off) tf VSD ISD 50A, VGS 0V 11 14 pF pF pF 2000 900 100 1.0 1 ... V V 20 50 150 ID A ID (pulse)* A 40 (Tc=25 C) PD Tch W 150 Tstg C C -55 ... External Dimensions FM20 (full-mold) C 0.5 G D S a b 3.3 0.2 10.0 0.2 1.35 0.15 1. ... 35 0.15 0.85 2.54 2.54 0.45 2.4 0.2 4.2 0.2 2.8 2.2 0.2 * PW 100m s, duty 1% +0.2 - ...

Ratings Unit V(BR)DSS ID=100m A, VGS=0V 60 min typ max IGSS m A m A VGS=+20V ... VGS=-10V +10 - 5 IDSS S V VDS=60V, VGS=0V 100 VTH VDS=10V, ID=250m A 2.5 1.0 Re ( ... V VGS=10V, ID=25A Coss Ciss VDS=10V f=1.0MHz VGS=0V Crss td (on) ID=25A VDD=12V RL=0 ... .48W VGS=10V tr td (off) tf VSD ISD=50A, VGS ... =0V 11 14 pF pF pF 2500 900 150 50 400 400 300 1.0 1.5 VGSS V V +20, -10 60 ... A 60(Tc=25 C) PD Tch W 150 Tstg C C -40 to +150 MOS FET FKV660S 98 External ... Dimensions TO220S a b 10.2 0.3 1.27 0.2 2.54 0.5 2.54 0.5 1.2 0.2 1.6 0.86 -0.1 ...

0 1 2 5 3 4 6 n ID VDS Characteristics 0 12 VDS (V ... ) 8 4 16 0 8 6 4 2 10 0 1.0 2.0 3.0 4.0 n ID VGS Characteristics VGS (V) 0 2 ... 4 8 6 10 n RDS (ON) ID Characteristics ... 0 0.10 0.05 ID (A) 0.30 0.25 0.20 0.15 -50 0 50 100 150 n RDS (ON) TC ... Characteristics 0 0.10 0.30 0.20 0.40 Tc C) 0.45 0 10 20 30 40 50 n ... n Safe Operating Area (single pulse) 0.5 0.1 10 1 5 VDS (V) 20 (Ta 25 C) 0.05 0 ... .1 0.5 1 5 10 n Re (yfs) ID Characteristics ... 0.1 0.5 1 5 10 50 ID (A) VGS 4.5V VGS 10V VGS 4V ID 4A VGS 10V VGS 0V f ...

0 2 4 10 12 6 8 14 n ID VDS ... Characteristics 0 5 4 VDS (V) 3 2 1 6 0.01 1 0.1 20 10 0 1 2 3 4 5 6 n ID ... VGS Characteristics VGS (V) 0 1 2 3 6 4 5 n RDS (ON) ID ... Characteristics 0 0.2 ID (A) 0.8 0.6 0.4 -50 0 50 100 150 n RDS (ON) TC ... Characteristics 0 0.1 0.3 0.2 0.4 Tc C) 0.5 0.5 1 5 10 50 n Safe Operating Area ... (single pulse) 0.5 0.1 1 5 VDS (V) 10 (Tc 25 C) 0.05 0.1 0.5 ... 1 6 n Re (yfs) ID Characteristics 0.2 0.5 1 5 10 ID (A) VGS 3V VGS 4V VGS 5V ... VGS 10V VGS 4V typ. ID 1A VGS 10V typ. VDS 10V VDS 10V ...

Ratings Electrical Characteristics 0 5 10 15 20 n ID VDS Characteristics ... 0 5 6 VDS (V) 4 3 2 1 7 0 5 6 4 3 2 1 7 0 2 4 6 8 10 n ID VGS ... Characteristics VGS (V) 0 1 2 3 4 5 6 7 n RDS (ON) ID Characteristics ... 0 1.0 0.5 ID (A) 1.5 -50 0 50 100 150 n RDS (ON) TC ... Characteristics 0 1.0 0.5 2.0 1.5 Tc C) 2.5 0 10 20 30 40 50 n ... n Safe Operating Area (single pulse) 0.5 0.1 0.05 10 1 5 VDS (V) 50 (Ta 25 C) 0. ... 05 0.1 0.5 1 7 n Re (yfs) ID Characteristics 2 5 ... 10 50 ID (A) 100 5.5V 5V VGS 4.5V ID 3.5A VDS 20V VGS 10V VGS 0V f 1MHz ...

0 1 2 3 4 5 6 n ID VDS Characteristics 0 4 8 ... VDS (V) 6 2 10 0 1 2 3 4 n ID VGS Characteristics 0 4 6 10 VGS ( ... V) 8 2 12 0.1 1 10 20 n RDS (ON) ID ... Characteristics 0 0.05 ID (A) 0.1 -50 0 50 100 150 n RDS (ON) TC ... Characteristics 0.02 0.06 0.10 Tc C) 0.12 1 5 10 50 n Capacitance VDS ... 50 500 100 1000 VDS (V) 2000 0.5 1 5 10 100 50 n Safe Operating Area ... (single pulse) 0.5 10 1 5 VDS (V) 50 (Ta 25 C) 0.4 1 5 ... ) ID Characteristics 2 5 10 ID (A) 30 4V 5V 10V VGS 3V VGS 4V VDS 10V VGS 10V ... VGS 0V f 1MHz Coss Ciss Crss VDS 10V 0 0.4 0.8 1.2 n IDR VSD Characteristics 0.1 ...

Ratings Unit V(BR) DSS ID 1mA, VGS 0V 47 52 57 min typ max IGSS m A m A VGS 20V ... 1.0 IDSS S V VDS 40V, VGS 0V 100 VTH VDS 10V, ID 250m A 2.5 1.8 1.0 ... Re (yfs) VDS 10V, ID 1.0A 1.0 RDS (ON) W W V m s m s m s m s V VGS ... 10V, ID 1.0A VGS 4V, ID 1.0A Coss Ciss VDS 10V f 1.0MHz VGS 0V Crss ... RG2 10kW tr td (off) tf VSD ISD 1A, VGS 0V 0.2 0.25 0.25 0.3 pF pF pF 200 120 ... 20 2.0 7.4 3.3 4.2 1.0 1.5 VGSS V V 20 3 6 ID A ID (pulse) 1 ... A 3 (Tc=25 C, 4 circuits operate) PT EAS 2 Tch W 150 ... 40 Tstg C C mJ -55 to +150 *1 PW 100m s ... , L 10mH, unclamped, RG 10W 2 1 15 16 4 3 13 14 6 5 11 12 8 7 9 10 Surface- ...

Ratings Unit V(BR) DSS ID 100m A, VGS 0V 50 min typ max IGSS nA m A VGS 20V 100 ... IDSS S V VDS 50V, VGS 0V 100 VTH VDS 10V, ID 1mA 2.3 13.0 1.8 9 ... .0 1.3 Re (yfs) VDS 10V, ID 4.0A 5.0 RDS (ON) W W V ns ns ns ns V VGS 10V, ... ID 4.0A VGS 4V, ID 4.0A Coss Ciss VDS 10V f 1.0MHz VGS 0V Crss ... td (on) ID 4A VDD 12V RL 3W VGS 5V RG 50W tr td (off ... ) tf VSD ISD 6A, VGS 0V 0.07 0.08 0.09 0.1 pF pF pF 700 300 90 50 80 ... 60 40 1.0 1.5 VGSS V V 20 4.5 9 ID A ID (pulse) 1 A 4 (Tc=25 C, 4 ... Characteristics 1 15 16 2 3 13 14 4 5 11 12 6 7 9 10 8 Surface-mount MOS ...

Ratings Unit V(BR) DSS ID=100m A, VGS=0V 120 min typ max IGSS m A m A VGS=± 20V ... 5 IDSS S V VDS=120V, VGS=0V 100 VTH VDS=10V, ID=250m A 2.0 1.0 Re ( ... yfs) VDS=10V, ID=4A 5.0 RDS (ON) W V ns ns ns ns V VGS=10V, ID= ... 4A VGS=4V, ID=4A Coss Ciss VDS=10V f=1.0MHz VGS=0V Crss td (on) ID=4A VDD=12V RL=3W ... RG=50W tr td (off) tf VSD ISD=6A, VGS=0V 0.15 0.2 0.2 0.25 pF pF pF 400 130 ... 30 100 300 250 200 1.0 1.5 VGSS V V 20 6 10 ID A ID (pulse ... )* 1 A 3 (Tc=25 C, 4 circuits operate) PT Tch W 150 Tstg C ... Characteristics 1 15 16 2 3 13 14 4 5 11 12 6 7 9 10 8 Surface-mount MOS ...

peak surge on-state current: ITRM=430A l Critical rate-of-rise of on-state ... PGM PG (AV) VRGM IFRM Tj Tstg V A Tj=-40 to +125° C, RGK=1kW A/m s W W V A C ... 600 430 1200 Peak forward gate current Peak ... gate power loss A 2.0 5.0 0.5 5 240 -40 to +125 Storage temperature VD 430V, ... , duty 10% f 50Hz, duty 10% f 50Hz VD 430V, 100kcycle, Wp=1.3m s, Ta=125° C C -40 ... VD=6V, RL=10W VD=6V, RL=10W IT=10A 10.0 1.4 V 20 1.5 mA V VGT IGT VD=480V, Tj= ... =125 C Junction to case IF=10A 100 1 1.4 4.0 m A IDRM (1) Off-state current (2) ... voltage On-state voltage mA IDRM (2) 0.1 Thermal resistance C/W Rth 2 Diode ... (K) (2). Anode (A) (3). Gate (G) 10.2 0.3 1.2 0.2 1.27 0.2 2.59 0.2 1.3 0.2 4.44 ...

) max IF (A) Part No. Condition 200 20 -40 to +150 200 1.10 20 0.25 1 200 20 -40 ... to +150 300 1.10 30 0.25 2 200 35 -40 to +150 350 1.10 35 0.25 2 VZ (V) ... -9LCNS SG-9LCNR SG-9LLCNS SG-9LLCNR 3.1 0.1 8.4 0.2 7.0 0.2 1.5 S type R type ... 107 External Dimensions (unit: mm) 3.1 0.1 8.4 0.2 9.5 0.2 1.5 (R0.5 ...

IF (mA) Fig. No. Tj Tstg ( C) SHV-05JS SHV-08J SHV-30J 2.5 4.0 15.0 30 30 30 ... 30 30 10 3 3 -40 to +150 3 5 8 10 10 30 2.6 to 5.0 4.5 ... to 8.0 16.0 to 30.0 1 2 3 27min 5 0.2 C0.5 C0.5 2.5 0.2 27min Lot No. Part No ... . code and cathode marking 27min 12 0.2 3.0 0.2 27min Part No. code and cathode ... marking (white) 27min 8 0.2 3.0 0.2 27min Lot No. Part No. code and cathode ... Dimensions (unit: mm) Fig. 1 (SHV-05JS) Fig. 3 (SHV-30J) Fig. 2 (SHV-08J ...

109 -40 to +150 Absolute Maximum Ratings ... SFPZ-68 50 1500 PZ 628 20 20 2 65 28± 3.0 28± 3.0 10 1.0 500 1.0 1 3 450 SPZ-G36 ... 30 11 36± 3.6 5 0.1 2 (Ta=25 C) Power Zener Diode Fig. 1 ... . 2 External Dimensions (unit: mm) 1.3 0.05 0.2 10.0 C2 Cathode marking 6.5 0.4 2. ... 3 0.4 5.4 4.9 4.1 5.4 a b c 0.4 0.8 0.1 0.8 1.5 max 0.1 0.55 0.1 0.55 0.1 1.15 ... 0.1 2.29 0.5 2.29 0.5 0 to 0.25 2.9 a) Part No. b) Polarity c) Lot No. ... 4.5 0.2 0.2 0.4 0.4 0.2 2.0min 1.35 1.35 5.1 +0.4 -0.1 1.1 1.5 ...

4.5 0.2 2.0min 1.35 0.4 1.35 0.4 5.1 +0.4 -0.1 1.1 0.2 1.5 0.2 2.4 0.1 0.57 0.02 ... Cathode marking 2.7 0.2 0.78 0.05 Cathode marking 4.0 0.2 0.78 0.05 ... Cathode marking 4.0 0.2 0.98 0.05 Cathode marking 1.4 0.1 6.5 0.2 Cathode ... marking 1.2 0.05 5.2 0.2 Cathode marking 9.0 15.0 3.3 3.4 2.3 1. ... 0 5.45 5.45 5.0 0.65 2.6 -0.1 +0.2 S type (SBD) R type S type (SBD) R type ... a b a b c 0.6 0.05 2.7 0.2 Cathode marking General-purpose Diodes ... 114 Fig. 1 Fig. 2 Fig. 3 Fig. 4 Fig. 5 Fig. 6 Fig. 9 Fig. 10 Fig. 7 Fig ... Part No. b) Polarity c) Lot No. C0.5 10.0 2.6 4.2 2.8 1.35 1.35 0.85 2.54 2.54 0 ...

1.2 1.27 10.2 0.86 0.76 2.54 2.54 4.44 1.3 2.59 0.4 115 Fig. 11 Full-mold Fig ... Fig. 15 Fig. 12 Full-mold Fig. 13 6.5 0.4 2.3 0.4 5.4 4.9 4.1 5.4 a b c 0.4 0.8 ... 0.1 0.8 1.5 max 0.1 0.55 0.1 0.55 0.1 1.15 1 2 3 0.1 2.29 0.5 2.29 0.5 0 to ... 0.25 2.9 a) Part No. b) Polarity c) Lot No. ... 9.0 15.0 3.3 3.4 2.3 1.0 5.45 5.45 5.0 0.65 2.6 -0.1 +0.2 a) Part No. b) Polarity c ... -purpose Diodes External Dimensions 10.0 2.2 2.6 4.2 2.8 1.35 0.85 5.08 0.45 3.3 ... 10 7.5 7.5 30 4-1.0 4.6 3.6 2.7 C3 0.7 3.2 0.1 - + a) Part No. b) Lot No. a b ...

Amber Orange Yellow Green Pure green 2.0 1.75 1.9 1.9 1.9 2.0 2.0 2.0 1.9 1.9 1. ... 9 2.0 2.0 2.0 2.0 2.0 3.3 3.3 2.5 2.2 2.5 2.5 2.5 2.5 2.5 2.5 ... 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.0 4.0 5 20 20 10 10 10 20 20 20 10 10 10 20 ... 555 630 610 587 570 560 555 635 615 525 470 GaP GaA As GaAsP GaAsP GaAsP GaP GaP ... A GaInP InGaN InGaN 1 2 3 2.8 2.8 4.5 1000 1200 26 75 18 37 14 25 22 65 32 84 ... Amber Orange Yellow Green Pure green 2.0 1.9 1.9 1.9 2.0 2.0 3.3 3.3 1.75 2.0 1. ... 9 1.9 1.9 2.0 2.0 2.0 2.0 2.0 2.0 1.9 1.9 1.9 2.0 2.0 2.0 2.0 1.9 1.9 1.9 ...

B A B A B A B A B A B A B A B A B A B 2.0 2.0 1.9 2.0 1.9 2.0 2.0 2.0 1.7 2.4 1.7 ... 2.4 1.9 2.0 1.9 2.0 1.9 2.0 1.7 2.4 1.9 2.0 1.7 2.4 1.9 2.0 1.9 2.0 1.9 2.0 ... 1.9 2.0 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.2 3.0 ... 2.2 3.0 2.5 2.5 2.5 2.5 2.5 2.5 2.2 3.0 2.5 2.5 2.2 3.0 2.5 2.5 2.5 2.5 2.5 2.5 ... Cathode 34 35 36 37 15 50 65 90 60 60 6.0 20 100 140 50 70 50 60 45 60 40 60 50 ... 60 10 25 30 40 15 25 15 20 10 20 10 20 122 Parameter ... Above 25 C f=1kHz, tw=100m s 30 -0.45 100 4 -30 to +85 -30 to +100 (Ta=25 C) ...

Yellow Green Deep green Pure green 2.0 1.7 1.9 1.9 1.9 2.0 2.0 2.0 2.0 3.3 3.3 ... 3.9 1.7 1.9 1.9 1.9 1.9 1.9 1.9 2.0 2.0 2.0 2.0 2.5 2.2 2.5 2.5 2.5 2.5 2.5 2.5 ... 2.5 4.0 4.0 4.8 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 ... 700 660 630 610 587 570 560 558 555 525 470 430 660 635 630 615 610 590 587 570 560 ... GaAsP A GaInP GaAsP GaP GaP GaP GaP 40 41 1.5 100 10 16 13 25 22 11 8.0 150 50 6. ... 0 150 100 15 10 20 10 15 35 33 15 10 ... Tstg Ratings GaP GaAsP InGaN GaN 30 -0.45 70 Above 25 C f=1kHz, tw=100m s 4 5 -30 ... B A B A B A B A B A B A B A B A B 1.9 2.0 2.0 2.0 1.7 2.0 1.9 2.0 2.0 2.0 1.9 2.0 ...

Fig. 1 Fig. 2 Fig. 3 Fig. 4 Fig. 5 Fig. 6 Fig. 7 Fig. 8 Fig. 9 Fig ... -purpose LEDs External Dimensions 5.6 0.2 20.0min 5.0 0.5 7.6 0.2 19.0min 0.8 (1. ... 0) Cathode 0.5 Resin heap 1.5max 0.5 0.1 Anode Cathode 1.0min 21.0min 9.4 0.3 ... Resin heap 0.8max Resin burr 0.3max 5.6 0.2 20.0min 5.5 0.5 8.2 0.2 19.0min 0.8 (1. ... 0) Cathode Resin heap 1.5max 0.5 5.6 0.2 23.0min 1.0min 6.9 0.2 Cathode Resin ... heap 1.5max (1.0) 0.5 0.1 5.6 0.2 23.0min 1.0min 7.6 0.2 Cathode Resin heap 1. ... 5max 0.5 0.1 (1.0) 2.2 0.4 0.1 Resin heap 1.5max Cathode 1.0min 25. ... 5min 5.0 0.2 6.5 0.5 0.8 1.5 2.2 Resin heap 0.8max 1.0min 24. ...

16 Fig. 17 Fig. 18 Fig. 19 Fig. 20 1.7 0.4 1.0min 25.8min 3.5 0.1 (1.3) Resin ... heap 1.5max Cathode 1.55 0.4 0.1 1.0min 25.4min 4.0 0.1 (1.3) Resin heap 1.5max ... Cathode 3.5 0.4 0.1 23.0min 1.0min 4.5 0.5 (1.6) 2.5 0.1 Resin heap 0.8max Cathode ... 3.5 5.5 0.4 0.1 23.0min 1.0min (1.7) 3.5 0.1 Resin heap 0.8max Resin ... burr 0.3max Cathode mark Cathode 1.7 0.4 0.1 1.0min 25.8min 4.2 0.1 (1.3) Resin ... heap 1.5max Cathode 1.0min 23.0min 8.0 0.2 (1.5) 4.0 0.1 2.5 0.2 Resin heap 1.5max ... Cathode C1.0 5.6 0.2 20.0min 5.0 0.5 5.8 0.2 19.0min 0.8 (1.0) 0.5 Resin ...

. 26 Fig. 27 Fig. 28 Fig. 29 Fig. 30 20.0min 5.0 0.5 9.0 0.2 4.0 0.2 19.0min 0.8 (1. ... 0) 2.5 0.15 Cathode 3.0 0.15 Resin heap 0.8max 1.0min 23.0min 5.0 0.2 Cathode 2.0 0.1 ... Resin heap 0.8max 1.0min 20.5min 8.0 0.2 Cathode 3.0 (1.0) 2.4 6.0 6.0 20.0min 1 ... .0min 2.8 Cathode 0.2 0.5 Resin heap 1.5max (2.0) 0.2 Resin burr ... 0.3max 0.2 0.5 1.0min 4.5 4.5 Resin burr 0.3min Resin heap 1.5max 4.0 ... 8.5 19.0min 0.8 Cathode 0.2 Resin burr 0.3max Resin heap 0.8max 1. ... 0min 2.3 5.0 23.0min Cathode 0.2 Resin burr 0.3max Resin heap 0.8max 1. ...

35 Fig. 36 Fig. 37 Fig. 38 Fig. 39 Fig. 40 3.6 5.8 0.5 23.0min 1.0min 3.9 Resin ... heap 0.8max Cathode mark Cathode Resin burr 0.3max ... 3.6 5.8 0.5 23.0min 1.0min 3.9 Resin heap 0.8max Resin burr 0.3max ... Cathode mark Cathode 1.0min 17.0min 10.6 0.5 1.5min 2.0 0.5 7.6 0.2 1.0 0. ... 5 0.1 Resin heap 1.5max Resin burr 0.3max 1.2 0.8 0.8 Resin heap 1.5max 0.5 0.1 ... Resin burr 0.3max 2.8 1.2 (2.0) 2.5 0.2 1.0min 1.5min 17.0min 7.0 0.5 5.0 0.2 ... Resin heap1.5max 17.0min (2.0) 0.5 0.1 Resin burr 0.3max 1.0min 1.5min 9.6 0.2 ... 11.6 0.5 0.8 1.2 3.9 20.0min 1.0min 1.5min 3.6 Resin heap 1.5max Resin burr ...

129 Fig. 41 Fig. 42 Fig. 43 Fig. 44 Fig. 45 Fig. 46 Fig. 47 0.5 0.1 Anode ... Cathode 1.0min 21.0min 9.4 0.3 Resin heap 0.8max Resin burr 0.3max 1.7 ... 0.4 1.0min 25.8min 3.5 0.1 (1.3) Resin burr 0.3max Resin heap 1. ... 5max Cathode 5.6 0.2 23.0min 1.0min A Cathode Resin heap 1.5max Resin burr ... 0.3max 0.5 0.1 (1.0) 5.6 24.0min 8.5 0.5 Anode Resin heap 1.5max 0.6 0.1 Resin ... burr 0.3max Cathode 2.0min (0.8) A 2.5 1.5 1.4 0.1 0.9 0.6 0.1 P.C.B. ... Anode Cathode Cathode mark 0.9 (0.5) Resin 1.5 1.4 (0.5) 0.9 1.3 Lens Resin ... Cathode Cathode mark P.C.B. 2.5 1.5 0.8 1.8 1.4 0.1 0.9 0.6 0.1 Lens P.C.B. ...