Catalog: Devices for Automotive
Company/Brand: Sanken Electric Co., Ltd.
4 08 f 7 in Devices for Automotive by Sanken Electric Co., Ltd.
specified) VIN VIN =12 to 16V, IO 0.4A IO 0.4A IO 1.0A IO=0.4A, VIN =6 to 16V ... IO =0 to 0.4A IO=5mA, Ta -10 to +100 C IO =0A VC 2.7V ... VC 0.4V f =100 to 120Hz 6 2 30 1 V 4.90 5.00 5.10 V 0.5 1.0 V V 30 mV 0.5 ... Line Regulation Load Regulation * 3 * 4 Parameter Symbol Unit Conditions ... C C C C/W C/W 35 VIN 1.0 18 1.5 - 40 to +125 - 40 to +100 - 40 to +125 5.5 ... 66.7 1 Equivalent Circuit Diagram Standard ... Circuit Diagram Features l Output current of 1.0A l 5-terminal ... voltage 1V at IO 1.0A, 0.5V at IO 0.4A l Built-in overcurrent, overvoltage and ... noises l TO220 equivalent full-mold package External Dimensions (unit: mm) ... 6 a b 1 2 3 4 5 10.0 0.2 3.2 0.2 0.95 0.15 0.85 -0.1 ... P1.7 0.7 4=6.8 0.7 4.2 0.2 2.8 0.2 2.6 0.1 3.9 0.7 8.2 0.7 0. ...
IO 0.8A VIN=8 to 16V IO=0 to 0.5A IO=0A f=100 to 120Hz 6 30 V 4.90 5.00 5.10 V 0.5 ... A W W C C C C/W C/W 35 0.8 22 1.8 -40 to +150 -40 to +100 -40 to +150 5.5 66. ... 7 2 Equivalent Circuit Diagram Standard ... External Dimensions (unit: mm) 8 Features l 3-terminal IC regulator with 0.8A ... protection circuits l TO220 equivalent full-mold package 4 P1.7 0.15 6.8 0.15 10 0.2 4 ... .2 2.8 0.2 2.6 0.15 3.2 0.2 0.94 0.15 0.45 a b Terminal connections 1. VIN 2. (NC ... ) 3. GND 4. (NC) 5. VO a: Part No. b: Lot No. 0.85 ... -0.1 +0.2 -0.1 (root dimensions) 1 2 3 4 5 (Forming No. 1115) D V DC input DC ... O O IN 1 3 SI-3003S C1 C2 5 2 N.C N.C 4 + + VIN VO 1 3 5 GND TSD ERR OCP DET ... drops to -5%. Co : Output capacitor (47 to 100m F, 50V) C1,C2 : Input ...
VC VIN IO=0.05A IO=0.3A IO1 0.05A IO2 0.4A VIN=6 to 18V, IO=0.05A IO1=0 to 0.05A ... IO=0.3A IO2=0 to 0.3A IO1=0A, VC=0V VC=4.8V VC=3.2V f=100 to 120Hz f=100 to 120Hz ... IO1 =0 to 0.05A IO2 =0 to 0.3A 6 35 V 4.80 5.00 5.20 V 4.80 5.00 5.20 V -0.1 0 ... .1 V 1.0 V 1.0 V 10 30 mV 10 30 mV 30 70 mV 40 70 mV 54 dB 54 dB 0.8 mA 0.1 A 0. ... 5 A 4.2 4.5 4.8 V 3.2 3.5 3.8 V 100 m A -100 m A 35 V ... heatsink V A A W W C C C C/W C/W 40 -13 VIN 0.07 0.4 18 1.5 -40 to +125 - ... 40 to +115 -40 to +125 5.5 66.7 (VO1 VO2) Line regulation Load ... Diagram External Dimensions (unit: mm) Features l Single input dual output sub output ( ... 5V/0.07A), main output (5V/0.4A) l Main output can be externally ... circuits l TO220 equivalent 5-terminal full-mold package 1 2 3 4 5 10.0 3.2 0.95 0. ...
Features l Single input dual output sub output ( ... circuits l TO220 equivalent 5-terminal full-mold miniature package Parameter Symbol ... IO 0.1A IO2 0 to 0.1A IO1 0A, VC 0V VC 4.8V VC 3.2V f 100 to 120Hz f 100 to 120Hz ... IO1 =0 to 0.04A IO2 =0 to 0.1A 6 30 V 4.80 5.00 5.20 V 4.80 5.00 5.20 V -0.1 0 ... .1 V 1.0 V 1.0 V 10 50 mV 10 50 mV 30 70 mV 40 70 mV 54 dB 54 dB 0.8 mA 0.06 A 0 ... .15 A 4.2 4.5 4.8 V 3.2 3.5 3.8 V 100 m A -100 m A 30 V ... C/W C/W 35 -13 VIN 0.04 0.1 22 1.8 -40 to +150 -40 to +105 -40 to +150 5.5 66. ... 7 Line regulation Load regulation a b 1 ... 2 3 4 5 10.0 3.2 0.95 0.85 P1.7 4 6.8 4.2 0.2 2.8 0.2 2.6 0.1 3.9 0.7 0. ... 7 0.7 8.2 0.7 0.45 -0.1 +0.2 -0.1 +0.2 (4.3) 1. VIN 2. VC ...
Features l Output current of 3A (Ta 25 C, VIN 8 ... VSWOUT VO VIN 8 to 18V VSSL 0.2V VIN 0V 4.80 5.00 82 50 60 5 3.1 5.20 100 V 50 ... Efficiency IO 0.5 to 3A % Oscillation frequency 70 kHz fOSC Quiescent circuit current ... V W W C C C/W C/W 35 3 -1 22 1.8 -40 to +150 -40 to +125 5.5 66.7 Notes: * ... 1. Efficiency is calculated by the following equation: *2. A dropping-type ... pulled up in the IC. a b 1 2 3 4 5 10.0 3.2 0.95 0.85 P1.7 4 6.8 4.2 0 ... .2 2.8 0.2 2.6 0.1 3.9 8.2 0.7 0.7 0.45 -0.1 +0.2 -0.1 +0.2 (4.3) 1. VIN 2. ... SWOUT 3. GND 4. VS 5. SS a: Part No. b: Lot No. ( ... Forming No. 1101) Parameter Symbol Unit ... Top V A Ta PD characteristics C 8 0.5 -40 18 3 +85 14 Switching Type Regulator ...
output transfer time (VBopr =14V, Tj= -40 to +150 C unless otherwise specified) ... current (per circuit) mA IB 0.8 3.7 Threshold input voltage 3.0 V VINth VIN ... Ropen Leak current of DIAG output VCC 7V -100 m A IDGH Saturation voltage of ... DIAG output IDGH -2mA, VBopr 6 to 16V 0.4 V VDL Saturation voltage of output ... Tj 25 C, IC 10mA 39 V VB-O IC 5mA 40 V TON TOFF TPLH TPHL VB-O PD Tj TOP ... C 200pF, R 0W V V W C C C -13 to +40 -0.3 to +7.0 Drive terminal applied ... voltage VD V -0.3 to VB -0.3 to +7.0 DIAG output source current IDIAG mA - ... supply and drive terminal VB-D V -0.4 Output current IO A 1.5 Output reverse ... .8 Electrostatic resistance ES/A V 250 4.8 -40 to +150 -40 to +115 -50 to +150 ... of 200 mJ (single pulse). * A start failure may occur if a short OFF signal of 10 ...
OUTA OUTA 4 5 STBY P-GND L-GND L-GND 9 8 1 C 12 ... 3 10 2 6 11 7 N.C. 4.7kW OUTB OUT B VS DIAG IA /A IB/B ZD: VS ... 35V C 100m F (Reference) Stepper motor SLA4708M CPU ... : mm) Stepper-motor Driver ICs SLA4708M 46 Features l High output breakdown ... Power Dissipation VS VO VIN VIL VIN 0.4V 2.4 50 0.8 50 V -0.8 mA V VIH IIL VIN 2 ... .4V IO 1A, Ta 25 C m A IIH Output ... heatsink V mA V C C W 35 50 -0.3 to +7 Output current Diagnostic output sink ... current IO, AVE A 1.5 10 7 -40 to +85 -40 to +150 3.5 (Ta=25 C) 1 2 3 ... 11 P2.54 0.7=27.94 1.0 31.5 max 0.85 1.2 0.15 31.0 0.2 24. ... 4 0.2 16.4 0.2 3.2 0.15 Ellipse 3.2 0.15 3.8 0.55 ... 2.2 0.7 1.7 0.7 4.8 0.2 1.45 0.15 Pin 1 12 4 5 6 7 8 9 10 11 12 +0.2 ...
Input terminal voltage PWM control frequency Forward reverse rotation switch ... frequency Power dissipation Input terminal ... Storage temperature VM IN1 IN2 PWM fPWM VIN IO=3A VM=40V VM=40V VIN1=VIN2=VPWM ... =3A VPWM: H L (Vth=2.5V typ) Stop mode Forward and reverse mode C=1m F (typ) ID SINK= ... 2 min.) 0.8 V Output transmission time Forward voltage characteristic of diode ... 16 20 A IOCP IM1 IM2 IM3 tDIAG VD L fCW PD1 PD2 Tj, Tch TOP Tstg V V V V ... PW 1ms, Duty 50% kHz Hz W W C C C 40 -0.3 to 7 -0.3 to 7 -0.3 to 7 20 500 ... current IO IO (p-p) A A 5 17 3.6 33.7 -40 to +150 -40 to +85 -40 to +150 ... Thermal resistance j-c C/W 3.7 j-a C/W 35 Standard Connection ... Chart External Dimensions (unit: mm) Features l P-ch MOS for high side and N-ch MOS ...
(unit: mm) 63 STA 10pin 25.25 4.0 31.0 4.0 4.0 31.0 SMA15pin SMA12pin 3GR-F 3GR-M ... 15.6 5.5 19.8 5.5 24.2 5.5 31.0 4.8 31.0 4.8 35 4.8 20.0 16 Pin 1 8 9 12.05 ... 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 17.28 24 1 12 13 31.0 4.8 ... MT-100 FM205 5.0 10.0 4.2 15.6 20.2 4.0 STA 8pin 1.0 +0.1 -0.05 0.25 +0.15 -0. ... 05 14.74 0.2 13.04 0.2 1.27 0.25 20 1 10 11 0.4 ... +0.15 -0.05 Fin thickness Custom IC ...
(mA) 200 IB2 (mA) 0.25typ ton (m s) 0.75typ tstg (m s) 0.25typ tf (m s) m A VCB - ... CEO V V IC -25mA -60min -80min hFE VCE -4V, IC -1A 40min VCE (sat) V IC -2A, IB -0. ... 2A -0.5max fT MHz VCE -12V, IE -0.2A 15typ COB pF ... VCB -10V, f 1MHz 90typ VCEO V V -60 -80 -80 VEBO V ... -6 IC A -4 IB A -1 PC W 25 (Tc 25 C) Tj C 150 ... IC Temperature Characteristics (typ.) n fT IE Characteristics (typ.) n j-a t ... .) Power Transistor 2SA1488/1488A 66 0.7 1 5 30 20 10 2 0 0 25 50 75 100 125 150 ... 0.01 0.05 0.5 0.1 1 3 0 10 20 30 60 50 40 0 0 -4 -3 -2 -1 -6 -0.01 -0.05 -0.1 -0. ... 5 -1 -5 -4 -3 -2 -1 VCE (V) -0.5 -1.0 -1.5 0 IB (A ... ) -1A -2A IC -3A 0 -1 -2 -3 -4 0 -0.5 -1.0 -1.5 VBE (V) (VCE -4V) 1 10 ... 100 1000 t (ms) (VCE -4V) (VCE -4V) -0.02 -0.01 -0.1 -0.5 -1 -4 -0.1 -1 -4 ...
Ratings Unit ICBO -24 VCC (V) 4 RL (W ) -6 IC (A) -10 VBB1 (V) 5 VBB2 ( ... V) -120 IB1 (mA) 120 IB2 (mA) 0.4typ ton (m s) 0.4typ tstg (m s) 0.2typ tf ( ... -0.3A -0.35max VFEC IECO -10A -2.5max fT MHz VCE -12V, IE 0.5A 40typ COB pF VCB ... -10V, f 1MHz 330typ VCEO V V -60 VEBO V -6 IC A ... IC Temperature Characteristics (typ.) n fT IE Characteristics (typ.) n j-a t ... .) Power Transistor 2SA1568 68 0 0 -8 -4 -12 -6 -2 -10 -2 -1 -3 -4 -5 -6 -10 -50 ... heatsink natural air cooling 0 -1.4 -1.0 -0.5 -7 -100 -10 -1000 -3000 -0.02 ... 02 -0.1 -1 -12 -10 2 10 300 100 0.3 0.5 4 1 1 10 100 1000 0.05 0.1 1 10 0 ... 20 30 50 40 35 30 20 10 2 0 0 25 50 75 100 125 150 Without heatsink 50 50 2 ... 0 -12 -6 -8 -10 -4 -2 0 -1.2 -0.4 -0.2 -0.6 -0.8 -1.0 125 C 25 C -30 C ...
Ratings Unit ICBO 50 VCC (V) 16.7 RL (W ) 3 IC (A) 10 VBB1 (V) -5 VBB2 (V ... V(BR) CEO V IC 50mA 120min hFE VCE 4V, IC 3A 70 to 220 VCE (sat) V V IC 3A, IB ... 0.5max VBE (sat) IC 3A, IB 0.3A 1.2max fT MHz VCE 12V, IE -0.5A 30typ COB pF VCB ... 10V, f 1MHz 110typ VCEO V V 120 VEBO V 8 IC A ... Tc=25 C) Tj C 150 Tstg C -55 to +150 7 (pulse 14) Absolute Maximum Ratings ... IC Temperature Characteristics (typ.) n fT IE Characteristics (typ.) n Safe ... (typ.) Power Transistor 2SC4153 73 0 0 3 4 2 1 5 7 5 2 1 3 4 0 2 3 1 0. ... 005 0.01 0.1 2 1 0.01 0.1 0.5 1 7 5 20 50 100 300 (VCE 4V) 0.01 0.1 0.5 1 ... 7 5 20 50 100 300 0.2 0.5 1 5 1 10 100 ... 1000 -0.01 -0.1 -1 -5 0 10 20 40 30 10 100 50 5 200 0.05 1 0.5 0.1 20 10 ... air cooling 30 20 10 2 0 0 25 50 75 100 125 150 Without heatsink 0 7 2 3 4 ...
Ratings Unit (Ta=25 C) (Ta=25 C) VDSS 450 Symbol Test Conditions Ratings Unit V( ... BR) DSS ID 100m A, VGS 0V 450 min typ max IGSS nA m A VGS 30V 100 ... IDSS S V VDS 450V, VGS 0V 100 VTH VDS 10V, ID 1mA 4.0 2.0 ... ) W V ns ns ns ns V Coss Ciss VDS 10V f 1.0MHz VGS 0V Crss td (on) ID 3.5A VDD ... RL 57W VGS 10V tr td (off) tf VSD ISD 7A, VGS 0V 0.84 1.10 pF pF pF 720 150 ... 65 25 40 70 50 1.0 1.5 VGSS V V 30 7 28 ID ID (pulse)* 1 A A A 35 (Tc=25 C ... ) PT IAS Tch W 150 7 EAS* 2 130 Tstg C C mJ -55 to +150 *1 ... 100m s, duty 1% *2 VDD 30V, L 5mH, IL 7A, unclamped, RG 50W 0 10 20 7 1 0 Drain- ... VDS (V) n ID VDS Characteristics 4 5 6 2 3 5 15 5.5V 5V VGS 10V 0 0 1 7 4 ... 5 6 0.4 0.6 0.8 0.2 1.0 -50 0 0 50 100 150 0.5 ...
0 1 2 5 3 4 6 n ID VDS Characteristics 0 12 VDS (V ... ) 8 4 16 0 8 6 4 2 10 0 1.0 2.0 3.0 4.0 n ID VGS Characteristics VGS (V) 0 2 ... 4 8 6 10 n RDS (ON) ID Characteristics ... ) TC Characteristics 0 0.10 0.30 0.20 0.40 Tc C) 0.45 0 10 20 30 40 50 n ... 0.1 0.5 1 5 10 50 ID (A) VGS 4.5V VGS 10V VGS 4V ID 4A VGS 10V VGS 0V f ... 1MHz Coss Ciss Crss VDS 10V 0 0.4 0.2 0.6 0.8 1.2 1.0 n IDR VSD ... Characteristics 0 5 4 3 2 1 VSD (V) 6 VGS 4V VGS 10V Ta -55 C ... 25 C 75 C 150 C ID (pulse) max ID (DC) max Ta - ... 55 C 25 C 75 C 150 C Ta 150 C 75 C 25 C -55 C VGS 0V Symbol Ratings Unit ... ID 250m A 2.0 1.0 Re (yfs) VDS 10V, ID 4.0A VGS 10V, ID 4.0A 5.0 RDS (ON) W W V ns ... ns ns ns V VGS 4V, ID 4.0A Coss Ciss VDS 10V f 1.0MHz VGS 0V Crss ...
0 2 4 10 12 6 8 14 n ID VDS ... Characteristics 0 5 4 VDS (V) 3 2 1 6 0.01 1 0.1 20 10 0 1 ... 2 3 4 5 6 n ID VGS Characteristics VGS (V) ... 0 1 2 3 6 4 5 n RDS (ON) ID Characteristics 0 0.2 ... ID (A) 0.8 0.6 0.4 -50 0 50 100 150 n RDS (ON) TC ... Characteristics 0 0.1 0.3 0.2 0.4 Tc C) 0.5 0.5 1 5 10 50 n Safe ... 0.2 0.5 1 5 10 ID (A) VGS 3V VGS 4V VGS 5V VGS 10V VGS 4V typ. ID 1A VGS ... 10V typ. VDS 10V VDS 10V VGS 4V 0 0.4 0.2 0.6 0.8 1.4 1.2 1.0 n IDR VSD ... Characteristics 0 8 6 4 2 VSD (V) 10 Ta -55 C 25 C 75 C 150 C ... pulse) max Ta -55 C 25 C 150 C Ta 150 C 75 C 25 C -55 C 25 C Ta 150 C 75 C -55 C ... Ratings Unit V(BR) DSS ID 1mA, VGS 0V 47 52 57 min typ max IGSS m A m A VGS ... 20V 1.0 IDSS S V VDS 40V, VGS 0V 100 VTH VDS 10V, ID 250m A 2.5 1 ...
n ID VDS Characteristics 0 5 6 VDS (V) 4 3 2 1 7 0 5 6 4 3 2 1 7 0 2 4 6 8 ... VGS Characteristics VGS (V) 0 1 2 3 4 5 6 7 n RDS (ON) ID Characteristics ... .0 0.5 2.0 1.5 Tc C) 2.5 0 10 20 30 40 50 n Capacitance VDS Characteristics ... VDS (V) 50 (Ta 25 C) 0.05 0.1 0.5 1 7 n Re (yfs) ID Characteristics 2 5 10 50 ... ID (A) 100 5.5V 5V VGS 4.5V ID 3.5A VDS 20V VGS 10V VGS 0V f 1MHz ... Coss Ciss Crss VDS 20V 0 0.4 0.2 0.6 0.8 1.0 n IDR VSD ... Characteristics 0 5 4 3 2 1 6 VSD (V) 7 VGS 0V VGS 10V Ta -55 C 25 C 150 C ID ( ... Ratings Unit (Ta=25 C) (Ta=25 C) VDSS 450 Symbol Test Conditions Ratings Unit V( ... BR) DSS ID 100m A, VGS 0V 450 min typ max IGSS nA m A VGS 30V 100 ... IDSS S V VDS 450V, VGS 0V 100 VTH VDS 10V, ID 1mA 4.0 5.0 ...
0 1 2 3 4 5 6 n ID VDS Characteristics 0 4 8 ... VDS (V) 6 2 10 0 1 2 3 4 n ID VGS Characteristics 0 4 6 10 VGS ( ... ) 0.5 10 1 5 VDS (V) 50 (Ta 25 C) 0.4 1 5 10 20 n Re (yfs) ID ... Characteristics 2 5 10 ID (A) 30 4V 5V 10V VGS 3V VGS 4V VDS 10V VGS 10V ... VGS 0V f 1MHz Coss Ciss Crss VDS 10V 0 0.4 0.8 ... 0.1 5 10 VSD (V) 1 0.5 20 VGS 0V VGS 4V VGS 10V Ta 150 C 75 C 25 C -55 C ID ( ... 8A 6.0 RDS (ON) W V ns ns ns ns V VGS 4V, ID 8A Coss Ciss VDS 10V f 1.0MHz VGS 0V ... Crss td (on) ID 8A VDD 30V RL 3.75W VGS 5V RG 50W tr td (off) tf VSD ISD ... 10A, VGS 0V 0.07 0.08 pF pF pF 1100 500 170 50 250 250 180 ... 1.0 1.5 VGSS j-c VISO V V 20 12 48 ID A ID (pulse)* 1 A 5 (Ta=25 C, 4 ...
Ratings Unit V(BR) DSS ID 1mA, VGS 0V 47 52 57 min typ max IGSS m A m A VGS 20V ... 1.0 IDSS S V VDS 40V, VGS 0V 100 VTH VDS 10V, ID 250m A 2.5 1 ... m s m s m s m s V VGS 10V, ID 1.0A VGS 4V, ID 1.0A Coss Ciss VDS 10V f 1.0MHz VGS ... 25 0.25 0.3 pF pF pF 200 120 20 2.0 7.4 3.3 4.2 1.0 1.5 VGSS V V 20 3 6 ID A ... ID (pulse) 1 A 3 (Tc=25 C, 4 circuits operate) PT EAS 2 Tch W 150 ... 40 Tstg C C mJ -55 to +150 *1 PW 100m s ... , L 10mH, unclamped, RG 10W 2 1 15 16 4 3 13 14 6 5 11 12 8 7 9 10 Surface- ... mount MOS FET Array SDK06 103 Equivalent Circuit ... 2.54 0.25 0.89 0.15 0.25 19.56 0.2 0.75 0.3 16 Pin 1 8 9 External Dimensions ... SMD-16A +0.15 -0.05 +0.15 -0.05 0 2 4 10 12 6 8 14 n ID VDS ... Characteristics 0 5 4 VDS (V) 3 2 1 6 0.01 1 0.1 20 10 0 1 ...
13.0 1.8 9.0 1.3 Re (yfs) VDS 10V, ID 4.0A 5.0 RDS (ON) W W V ns ns ns ns V VGS ... 10V, ID 4.0A VGS 4V, ID 4.0A Coss Ciss VDS 10V f 1.0MHz VGS 0V Crss ... td (on) ID 4A VDD 12V RL 3W VGS 5V RG 50W tr td (off ... ) tf VSD ISD 6A, VGS 0V 0.07 0.08 0.09 0.1 pF pF pF 700 300 90 50 ... 80 60 40 1.0 1.5 VGSS V V 20 4.5 9 ID A ID (pulse) 1 A 4 (Tc=25 C, 4 ... Characteristics 1 15 16 2 3 13 14 4 5 11 12 6 7 9 10 8 Surface-mount MOS ... FET Array SDK08 104 Equivalent Circuit ... 2.54 0.25 0.89 0.15 0.25 19.56 0.2 0.75 0.3 16 Pin 1 8 9 External Dimensions ...
ID=250m A 2.0 1.0 Re (yfs) VDS=10V, ID=4A 5.0 RDS (ON) W V ns ns ns ns V VGS=10V ... , ID=4A VGS=4V, ID=4A Coss Ciss VDS=10V f=1.0MHz VGS=0V Crss td (on) ID=4A VDD=12V RL=3W ... VGS=0V 0.15 0.2 0.2 0.25 pF pF pF 400 130 30 100 300 250 200 1.0 1.5 VGSS V ... 6 10 ID A ID (pulse)* 1 A 3 (Tc=25 C, 4 circuits operate) PT Tch W 150 Tstg C ... Characteristics 1 15 16 2 3 13 14 4 5 11 12 6 7 9 10 8 Surface-mount MOS ... FET Array SDK09 (under development) 105 ... 2.54 0.25 0.89 0.15 0.25 19.56 0.2 0.75 0.3 +0.15 -0.05 +0.15 -0.05 16 Pin 1 8 ... Dimensions SMD-16A 0 1 2 5 3 4 6 n ID VDS Characteristics 0 12 VDS (V ... ) 8 4 16 0 8 6 4 2 10 0 1.0 2.0 3.0 4.0 n ID VGS Characteristics VGS (V) 0 2 ... 4 8 6 10 n RDS (ON) ID Characteristics ...
Orange Yellow Green Pure green 2.0 1.75 1.9 1.9 1.9 2.0 2.0 2.0 1.9 1.9 1.9 2.0 ... 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.0 4.0 5 20 20 10 10 10 20 20 20 10 10 10 ... 20 20 20 20 20 20 700 660 630 610 587 570 560 555 630 610 587 ... 570 560 555 635 615 525 470 GaP GaA As GaAsP GaAsP GaAsP GaP GaP ... A GaInP InGaN InGaN 1 2 3 2.8 2.8 4.5 1000 1200 26 75 18 37 14 25 22 65 32 84 ... 50 36 75 18 37 19 34 65 30 84 50 280 570 2000 ... green 2.0 1.9 1.9 1.9 2.0 2.0 3.3 3.3 1.75 2.0 1.9 1.9 1.9 2.0 2.0 2.0 2.0 2.0 2.0 ... 1.9 2.0 2.0 2.0 2.5 2.5 2.5 2.5 2.5 2.5 4.0 4.0 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 ... 10 10 20 20 635 630 610 587 560 555 525 470 660 700 630 610 587 570 560 635 615 560 ... 700 630 610 587 570 560 555 700 630 610 587 570 560 555 A GaInP GaAsP ...
Green Deep green Pure green 2.0 1.7 1.9 1.9 1.9 2.0 2.0 2.0 2.0 3.3 3.3 3.9 ... 1.7 1.9 1.9 1.9 1.9 1.9 1.9 2.0 2.0 2.0 2.0 ... 2.5 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.0 4.0 4.8 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 ... 20 20 20 20 20 20 3 20 3 20 20 20 20 20 700 660 630 610 587 570 560 558 555 525 470 ... 430 660 635 630 615 610 590 587 570 560 558 ... GaAsP A GaInP GaAsP GaP GaP GaP GaP 40 41 1.5 100 10 16 13 25 22 11 8.0 150 50 6. ... Tstg Ratings GaP GaAsP InGaN GaN 30 -0.45 70 Above 25 C f=1kHz, tw=100m s 4 5 -30 ... B A B A B A B A B A B 1.9 2.0 2.0 2.0 1.7 2.0 1.9 2.0 2.0 2.0 1.9 2.0 1.7 2.0 1.9 ... 2.0 2.0 2.0 1.9 2.0 1.7 2.0 2.0 2.0 2.5 2.5 2.5 2.5 2.2 2.5 2.5 ... 610 560 555 555 587 560 660 570 570 570 42 43 10 20 20 20 20 20 10 20 5.0 5.0 10 5 ...
