Catalog: Devices for Automotive
Company/Brand: Sanken Electric Co., Ltd.
f 2 03 in Devices for Automotive by Sanken Electric Co., Ltd.
Voltage Temperature Coefficient ( Tj= 25 C, VIN=14V unless otherwise specified) ... 0.4A IO=5mA, Ta -10 to +100 C IO =0A VC 2.7V VC 0.4V f =100 to 120Hz 6 2 30 1 V 4.90 ... V 30 mV 0.5 100 mV 54 3 dB 10 mA 1.2 A 2.0 V 0.8 V 20 0.3 m A mA VO VDIF D ... Ratings Absolute Maximum Ratings (Ta 25 C) DC Input Voltage Output Control ... Diagram Standard Circuit Diagram Features l Output current of 1.0A l 5-terminal ... (rise only) l Voltage accuracy of 2% l Low dropout voltage 1V at IO 1.0A, 0. ... noises l TO220 equivalent full-mold package External Dimensions (unit: mm) ... 6 a b 1 2 3 4 5 10.0 0.2 3.2 0.2 0.95 0.15 0.85 -0.1 P1.7 0.7 4=6.8 0.7 ... 4.2 0.2 2.8 0.2 2.6 0.1 3.9 0.7 8.2 0.7 0.45 -0.1 +0.2 (4.3) +0.2 1. GND 2 ...
voltage Quiescent circuit current (Tj=25 C, VIN=14V, IO=0.5A unless otherwise ... IO 0.8A VIN=8 to 16V IO=0 to 0.5A IO=0A f=100 to 120Hz 6 30 V 4.90 5.00 5.10 V 0.5 ... Ratings Absolute Maximum Ratings (Ta=25 C) DC input voltage Output current ... A W W C C C C/W C/W 35 0.8 22 1.8 -40 to +150 -40 to +100 -40 to +150 ... 5.5 66.7 2 Equivalent Circuit Diagram Standard ... External Dimensions (unit: mm) 8 Features l 3-terminal IC regulator with 0.8A ... output current l Voltage accuracy of 2% l Low Dropout voltage 0.5V at IO 0.5A, ... protection circuits l TO220 equivalent full-mold package 4 P1.7 0.15 6.8 0.15 10 0.2 4 ... .2 0.2 2.8 0.2 2.6 0.15 3.2 0.2 0.94 0.15 0.45 a b Terminal connections ... 1. VIN 2. (NC) 3. GND 4. (NC) 5. VO a: Part No. b ...
typ max Unit Conditions Ratings (Ta=25 C) DC input voltage Battery reverse ... protection starting temperature (Tj=25 C, VIN=14V unless otherwise specified) ... =0 to 0.3A IO1=0A, VC=0V VC=4.8V VC=3.2V f=100 to 120Hz f=100 to 120Hz IO1 =0 to ... 05A IO2 =0 to 0.3A 6 35 V 4.80 5.00 5.20 V 4.80 5.00 5.20 V -0.1 0.1 V 1.0 V 1 ... 70 mV 54 dB 54 dB 0.8 mA 0.1 A 0.5 A 4.2 4.5 4.8 V 3.2 3.5 3.8 V 100 m A -100 m ... VO LOAD2 RREJ1 RREJ2 Iq I (S1) 1 I (S1) 2 VCH VCL ICH ICL VOVP TTSD IO1 IO2 PD1 ... Diagram External Dimensions (unit: mm) Features l Single input dual output sub output ( ... circuits l TO220 equivalent 5-terminal full-mold package 1 2 3 4 5 10.0 3.2 0.95 0. ... 85 P1.7 4 6.8 4.2 0.2 2.8 0.2 2.6 0.1 3.9 0.7 0.7 0.15 8.2 0.7 0.45 -0 ...
Features l Single input dual output sub output ( ... circuits l TO220 equivalent 5-terminal full-mold miniature package Parameter Symbol ... typ max Unit Conditions Ratings (Ta=25 C) DC input voltage Battery reverse ... protection starting temperature (Tj 25 C, VIN 14V unless otherwise specified) ... 0 to 0.1A IO1 0A, VC 0V VC 4.8V VC 3.2V f 100 to 120Hz f 100 to 120Hz IO1 =0 to ... 04A IO2 =0 to 0.1A 6 30 V 4.80 5.00 5.20 V 4.80 5.00 5.20 V -0.1 0.1 V 1.0 V 1 ... mV 54 dB 54 dB 0.8 mA 0.06 A 0.15 A 4.2 4.5 4.8 V 3.2 3.5 3.8 V 100 m A -100 m ... VO LOAD2 RREJ1 RREJ2 Iq I (S1) 1 I (S1) 2 VCH VCL ICH ICL VOVP TTSD IO1 IO2 PD1 ... C C C C/W C/W 35 -13 VIN 0.04 0.1 22 1.8 -40 to +150 -40 to +105 -40 to +150 ... Line regulation Load regulation a b 1 2 3 4 5 10.0 3.2 0.95 0.85 P1.7 4 6.8 ...
Features l Output current of 3A (Ta 25 C, VIN 8 to 18V) l High efficiency of ... 82% (VIN 14V, IO 2A) l Requires 5 external components only ... typ max Unit Conditions Ratings (Ta=25 C) Input voltage Output voltage SWOUT ... Discharge resistance (VIN 14V, IOUT 2A, Tj 25 C unless otherwise specified) ... VIN IO VSWOUT VO VIN 8 to 18V VSSL 0.2V VIN 0V 4.80 5.00 82 50 60 5 3.1 5.20 ... 100 V 50 mV 0.2 25 200 35 V 15 m A kW mV VO LINE VO LOAD ... Efficiency IO 0.5 to 3A % Oscillation frequency 70 kHz fOSC Quiescent circuit current ... -alone V W W C C C/W C/W 35 3 -1 22 1.8 -40 to +150 -40 to +125 5.5 66.7 ... : *1. Efficiency is calculated by the following equation: *2. A dropping-type ...
typ max Unit Conditions Ratings (Ta=25 C) Power supply voltage Input terminal ... VB VIN VDIAG VBopr Lo output Tj 25 C VO VBopr -1.5V VBopr 6V IO 1A IO 1A ... IO 1A IO 1A V 0.8 19.3 1.0 2.5 34 34 1.6 6.0 16 mA 1.5 V 30 100 30 ... Saturation voltage of DIAG output IDGH -2mA, VBopr 6 to 16V 0.4 V VDL Saturation ... voltage of output transistor IO 1.2A, VBopr 6 to 16V 0.2 V VCE (sat) IO 1.5A ... (sat) Output terminal sink current Tj 25 C, VCEO 14V 5 mA IO (off) Surge clamp ... voltage Tj 25 C, IC 10mA 39 V VB-O IC 5mA 40 V TON ... output Input current VIN 5V VIN 0V 100 29 28 -1.0 mA m A IIN IIN Hi output Lo ... heatsink, all circuits operating C 200pF, R 0W V V W C C C -13 to +40 -0.3 to ... A -1.8 Electrostatic resistance ES/A V 250 4.8 -40 to +150 -40 to +115 -50 to +150 ...
P-GND L-GND L-GND 9 8 1 C 12 3 10 2 6 11 7 N.C. 4.7kW OUTB OUT B VS DIAG ... IA /A IB/B ZD: VS 35V C 100m F (Reference) Stepper motor SLA4708M CPU ... ) Stepper-motor Driver ICs SLA4708M 46 Features l High output breakdown voltage of 50V ... typ max Unit Conditions Ratings (Ta=25 C) Power supply voltage Breakdown ... IB/B standby) Input current (VS=12V, Ta=25 C) Diagnostic output withstand voltage ... Dissipation VS VO VIN VIL VIN 0.4V 2.4 50 0.8 50 V -0.8 mA V VIH IIL VIN 2.4V ... IO 1A, Ta 25 C m A IIH Output saturation voltage 1.3 ... V VO.STA IO 1.5A, Ta 25 C VO 16V IDIAG 5mA VS 12V 1.5 100 0.3 ... IO.LEAK 1.8 Overcurrent detection A ISD 27.5 Overvoltage detection V VSD Saturation ... 5 10 7 -40 to +85 -40 to +150 3.5 (Ta=25 C) 1 2 3 11 P2.54 0.7=27.94 1.0 31.5 ...
typ max Unit Conditions Ratings (Ta=25 C) Motor supply voltage Input terminal ... voltage PWM control frequency Forward reverse rotation switch frequency Power ... (Unless, otherwise specified, Tj=Tch=25° C, VM=14V, IO=3A) Output leakage ... Storage temperature VM IN1 IN2 PWM fPWM VIN IO=3A VM=40V VM=40V VIN1=VIN2=VPWM ... =10A IO=3A IO=10A IO=3A VPWM: H L (Vth=2.5V typ) Stop mode Forward and reverse mode ... C=1m F (typ) ID SINK=1mA V 0.3 6 18 V 100 m ... A 100 m A V 2.0 V 200 m A 22 1.0 0.8 1.0 0.8 22 16 0.3 m A V mA mA ... mA ms V V, VO-PG IO=3A VM=24V (2 min.) 0.8 V Output transmission time ... Forward voltage characteristic of diode ... between drain and source VPWM: L H (Vth=2.5V typ) 3.0 -100 10 15 10 m s m s m ...
Dimensions (unit: mm) 63 STA 10pin 25.25 4.0 31.0 4.0 4.0 31.0 SMA15pin SMA12pin ... 3GR-F 3GR-M STR-S SLA12pin SPM SMD16pin ... SLA15pin SLA18pin 15.6 5.5 19.8 5.5 24.2 5.5 31.0 4.8 31.0 4.8 35 4.8 20.0 16 ... 12.05 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 17.28 24 1 12 13 31. ... 0 4.8 MT-100 FM205 5.0 10.0 4.2 15.6 20.2 4.0 STA 8pin 1.0 +0.1 -0.05 0.25 +0.15 ... -0.05 14.74 0.2 13.04 0.2 1.27 0.25 20 1 10 11 0.4 +0.15 -0.05 Fin thickness ...
common emitter) Symbol Ratings Unit (Ta=25 C) (Ta 25 C) VCBO -60 2SA1488 2SA1488A ... Unit ICBO -12 VCC (V) 6 RL (W ) -2 IC (A) -10 VBB1 (V) 5 VBB2 (V) -200 IB1 ... (mA) 200 IB2 (mA) 0.25typ ton (m s) 0.75typ tstg (m s) 0.25typ tf ... (m s) m A VCB -80 -60 -100max -100max 2SA1488A 2SA1488 IEBO m A VEB -6V -100max V(BR ... ) CEO V V IC -25mA -60min -80min hFE VCE -4V, IC -1A 40min ... VCE (sat) V IC -2A, IB -0.2A -0.5max fT MHz VCE -12V, IE -0.2A 15typ COB pF ... VCB -10V, f 1MHz 90typ VCEO V V -60 -80 -80 VEBO V ... -6 IC A -4 IB A -1 PC W 25 (Tc 25 C) Tj C 150 Tstg C -55 to +150 n IC ... IC Temperature Characteristics (typ.) n fT IE Characteristics (typ.) n j-a t ... Characteristics (typ.) Power Transistor 2SA1488/1488A 66 0.7 1 5 30 20 10 2 0 0 25 50 ...
Symbol Ratings Unit (Ta 25 C) (Ta=25 C) VCBO -50 Symbol Test Conditions ... Ratings Unit ICBO -24 VCC (V) 4 RL (W ) -6 IC (A) -10 VBB1 (V ... ) 0.4typ ton (m s) 0.4typ tstg (m s) 0.2typ tf (m s) m A VCB -50V -100max IEBO m A ... VEB -6V -100max V(BR) CEO V IC -25mA -50min hFE VCE -1V, IC -6A 50min VCE ... (sat) V IC -6A, IB -0.3A -0.35max fT MHz VCE -12V, IE -0.5A 40typ COB pF ... VCB -10V, f 1MHz 330typ VCEO V V -50 VEBO V -6 ... IC A -12 IB A -3 PC W 35 (Tc 25 C) Tj C 150 Tstg C -55 to +150 ... IC Temperature Characteristics (typ.) n fT IE Characteristics (typ.) n j-a t ... Characteristics (typ.) Power Transistor 2SA1567 67 0 0 -8 -4 -12 -6 -2 -10 -2 -1 -3 -4 ... natural air cooling 0 -1.5 -1.0 -0.5 -2 -100 -10 -1000 -3000 IB (mA) -0.02 -0.1 ...
Symbol Ratings Unit (Ta=25 C) (Ta=25 C) VCBO -60 Symbol Test Conditions ... Ratings Unit ICBO -24 VCC (V) 4 RL (W ) -6 IC (A) -10 VBB1 (V ... ) 0.4typ ton (m s) 0.4typ tstg (m s) 0.2typ tf (m s) m A VCB -60V -100max IEBO mA ... VEB -6V -60max V(BR) CEO V IC -25mA -60min hFE VCE -1V, IC -6A 50min VCE ( ... -6A, IB -0.3A -0.35max VFEC IECO -10A -2.5max fT MHz VCE -12V, IE 0.5A 40typ COB pF ... VCB -10V, f 1MHz 330typ VCEO V V -60 VEBO V -6 IC A ... IB A -3 PC W 35 (Tc=25 C) Tj C 150 Tstg C -55 to +150 12 ... IC Temperature Characteristics (typ.) n fT IE Characteristics (typ.) n j-a t ... Characteristics (typ.) Power Transistor 2SA1568 68 0 0 -8 -4 -12 -6 -2 -10 -2 -1 -3 -4 ... -10 -1000 -3000 -0.02 -0.1 -1 -12 -10 2 10 300 100 -0.02 -0.1 -1 -12 -10 2 10 ...
Symbol Ratings Unit (Ta=25 C) (Ta=25 C) VCBO 80 Symbol Test Conditions ... Ratings Unit ICBO 12 VCC (V) 6 RL (W ) 2 IC (A) 10 VBB1 (V) -5 VBB2 (V) 200 IB1 ... (mA) -200 IB2 (mA) 0.2typ ton (m s) 1typ tstg (m s) 0.3typ tf (m ... m A VCB 80V 100max V(BR) CEO V IC 25mA 60min hFE VCE 4V, IC 1A 40 to 320 VCE ( ... sat) V IC 2A, IB 0.2A 0.5max fT MHz VCE 12V, IE -0.2A 15typ COB pF VCB ... 10V, f 1MHz 60typ VCEO V V 60 VEBO V 6 IC A ... 4 IB A 1 PC W 25 (Tc=25 C) Tj C 150 Tstg C -55 to +150 ... IC Temperature Characteristics (typ.) n fT IE Characteristics (typ.) n j-a t ... Characteristics (typ.) Power Transistor 2SC3851 69 0 0 1 2 3 4 2 1 3 4 5 6 VCE (A) ... 30 20 10 0 0 50 100 150 Ta C) Without ...
Symbol Ratings Unit (Ta=25 C) (Ta=25 C) VCBO 80 Symbol Test Conditions ... Ratings Unit 20 VCC (V) 20 RL (W ) 1.0 IC (A) 10 VBB1 (V) -5 VBB2 ... ) 0.8typ ton (m s) 3.0typ tstg (m s) 1.2typ tf (m s) m A 10max IEBO m A VEB 6V ... ICBO VCB 80V 100max V(BR) CEO V IC 25mA 60min hFE VCE 4V, IC 0.5A 500min VCE ( ... sat) V IC 2A, IB 50mA 0.5max fT MHz VCE 12V, IE -0.2A 15typ COB pF VCB ... 10V, f 1MHz 50typ VCEO V V 60 VEBO V 6 IC A ... 3 IB A 1 PC W 25 (Tc=25 C) Tj C 150 Tstg C -55 to +150 ... IC Temperature Characteristics (typ.) n fT IE Characteristics (typ.) n j-a t ... Characteristics (typ.) Power Transistor 2SC3852 70 0 0 1 2 3 2 1 3 4 5 6 0.01 0.1 ... 0.5 1 3 100 500 2000 1000 (VCE=4V) 0.01 0.1 0.5 1 3 100 ...
Symbol Ratings Unit (Ta=25 C) (Ta=25 C) VCBO 100 Symbol Test Conditions ... Ratings Unit ICBO 20 VCC (V) 4 RL (W ) 5 IC (A) 0.1 IB1 (A ... ) -0.1 IB2 (A) 0.5typ ton (m s) 2.0typ tstg (m s) 0.5typ tf (m s) m A m A VCB ... IEBO VEB 15V 10max V(BR) CEO V IC 25mA 50min hFE VCE 4V, IC 1A 300 to 1600 ... VCE (sat) V IC 5A, IB 0.1A 0.5max fT MHz VCB 12V, IE -0.5A 24typ COB pF VCB ... 10V, f 1MHz 150typ VCEO V V 50 VEBO V 15 IC A ... IB A 3 PC W 35 (Tc=25 C) Tj C 150 Tstg C -55 to +150 10 ... IC Temperature Characteristics (typ.) n fT IE Characteristics (typ.) n j-a t ... Characteristics (typ.) Power Transistor 2SC4024 71 0 0 4 2 6 10 8 2 4 6 0 1.0 1.5 0.5 ... 0.002 0.01 0.1 2 1 0.02 0.1 0.5 5 1 10 100 500 1000 ... 1 4 1 10 100 1000 10 50 3 5 100 0.2 1 0.5 30 10 5 Without heatsink natural ...
emitter) Symbol Ratings Unit (Ta=25 C) (Ta=25 C) VCBO 60 Symbol Test ... Conditions Ratings Unit ICBO 24 VCC (V) 4 RL (W ) 6 IC (A) 10 VBB1 (V ... IEBO mA VEB 6V 60max V(BR) CEO V IC 25mA 60min hFE VCE 1V, IC 6A 50min VCE (sat ... V IC 6A, IB 1.3A 0.35max VFEC VECO 10A 2.5max fT MHz VCE 12V, IE -0.5A 24typ COB pF ... VCB 10V, f 1MHz 180typ VCEO V V 60 VEBO V 6 IC A ... IB A 3 PC W 35 (Tc=25 C) Tj C 150 Tstg C -55 to +150 12 n ... IC Temperature Characteristics (typ.) n fT IE Characteristics (typ.) n j-a t ... Characteristics (typ.) Power Transistor 2SC4065 72 0 0 4 2 8 6 12 10 2 4 6 0 1.0 1.3 ... 400 0.02 0.1 1 1012 3 5 50 10 100 400 0.2 0.5 1 5 1 10 100 1000 10 50 3 5 100 0. ... heatsink natural air cooling 40 30 20 10 2 0 0 25 50 75 100 125 150 Without ...
Symbol Ratings Unit (Ta=25 C) (Ta =25 C) VCBO 200 Symbol Test Conditions ... 3max tstg (m s) 0.5max tf (m s) m A VCB 200V 100max IEBO m A VEB 8V 100max V(BR) CEO ... IC 50mA 120min hFE VCE 4V, IC 3A 70 to 220 VCE (sat) V V IC 3A, IB 0.3A 0.5max VBE ... (sat) IC 3A, IB 0.3A 1.2max fT MHz VCE 12V, IE -0.5A 30typ COB pF VCB ... 10V, f 1MHz 110typ VCEO V V 120 VEBO V 8 IC A ... IB A 3 PC W 30 (Tc=25 C) Tj C 150 Tstg C -55 to +150 7 ( ... IC Temperature Characteristics (typ.) n fT IE Characteristics (typ.) n Safe ... Characteristics (typ.) Power Transistor 2SC4153 73 0 0 3 4 2 1 5 7 5 2 1 3 4 0 2 3 1 ... 0.005 0.01 0.1 2 1 0.01 0.1 0.5 1 7 5 20 50 100 300 ... (VCE 4V) 0.01 0.1 0.5 1 7 5 20 50 100 300 0.2 0.5 1 5 1 10 100 1000 -0 ...
Symbol Ratings Unit (Ta=25 C) (Ta=25 C) VDSS 450 Symbol Test Conditions ... , VGS 0V 100 VTH VDS 10V, ID 1mA 4.0 2.0 3.0 5 Re (yfs) VDS 20V, ID 3.5A VDS ... ) W V ns ns ns ns V Coss Ciss VDS 10V f 1.0MHz VGS 0V Crss td (on) ID 3.5A VDD ... 200V RL 57W VGS 10V tr td (off) tf VSD ISD ... 0V 0.84 1.10 pF pF pF 720 150 65 25 40 70 50 1.0 1.5 VGSS V V 30 7 28 ID ... ID (pulse)* 1 A A A 35 (Tc=25 C) PT IAS Tch W 150 7 EAS* 2 130 Tstg ... C mJ -55 to +150 *1 PW 100m s, duty 1% *2 VDD 30V, L 5mH, IL 7A, unclamped, RG ... 50W 0 10 20 7 1 0 Drain-source voltage VDS (V) n ID ... VDS Characteristics 4 5 6 2 3 5 15 5.5V 5V VGS 10V 0 0 1 7 4 5 6 0. ... 4 0.6 0.8 0.2 1.0 -50 0 0 50 100 150 0.5 1.0 2.0 1.5 ... 2.5 4 1 5 10 20 0 2 7 6 5 4 VDS 20V 25 C 125 C 0 20 40 0 50 100 150 0 2 4 6 8 ...
Symbol Ratings Unit (Ta=25 C) (Ta=25 C) VDSS 40 Symbol Test Conditions ... VGS 0V 40 min typ max IGSS m A m A VGS +20V VGS -10V +10 -5 IDSS S V VDS 40V, VGS ... 0V 100 VTH VDS 10V, ID 250m A 2.3 1.3 Re (yfs) VDS 10V, ID 25A 20 RDS (ON ... ) mW V ns ns ns ns V VGS 10V, ID 25A Coss Ciss VDS 10V f 1.0MHz VGS 0V Crss ... td (on) ID 25A VDD 12V RL 0.48W VGS 10V tr td (off) tf ... VSD ISD 50A, VGS 0V 6 9 pF pF pF 2000 1200 200 1.0 1.5 To be defined VGSS V ... V +20, -10 60 180 ID A ID (pulse)* A 40 (Tc ... =25 C) PD Tch W 150 Tstg C C -55 to +150 ... Ratings Electrical Characteristics MOS FET FKV460 (under development) 93 a) Part ... Unit: mm) External Dimensions TO220F (full-mold) G D S a b 3.3 0.2 10.0 0.2 1.35 0.15 1 ...
Symbol Ratings Unit (Ta=25 C) (Ta=25 C) VDSS 40 Symbol Test Conditions ... VGS 0V 40 min typ max IGSS m A m A VGS +20V +10 VGS -10V -5 IDSS S V VDS 40V, VGS ... 0V 100 VTH VDS 10V, ID 250m A 2.3 1.3 Re (yfs) VDS 10V, ID 25A 20.0 RDS ... (ON) mW V ns ns ns ns V VGS 10V, ID 25A Coss Ciss VDS 10V f 1.0MHz VGS 0V Crss ... td (on) ID 25A VDD 12V RL 0.48W VGS 10V tr td (off) tf ... VSD ISD 50A, VGS 0V 7 9 pF pF pF 2800 1400 600 20 600 250 100 1.0 1.5 VGSS ... V V +20, -10 60 180 ID A ID (pulse)* A 60 (Tc ... =25 C) PD Tch W 150 Tstg C C -55 to +150 ... Ratings Electrical Characteristics MOS FET FKV460S 94 a) Part No. b) Lot No. (Unit ... : mm) External Dimensions TO220S a b 10.2 0.3 1.27 0.2 2.54 0.5 2.54 0.5 1.2 0.2 ...
Symbol Ratings Unit (Ta=25 C) (Ta=25 C) VDSS 50 Symbol Test Conditions ... VGS 0V 50 min typ max IGSS m A m A VGS +20V +10 IDSS S V VDS 50V, VGS 0V 100 VTH ... VDS 10V, ID 250m A 2.5 1.0 Re (yfs) VDS 10V, ID 25A 20 RDS (ON ... ) mW V ns ns ns ns V VGS 10V, ID 25A Coss Ciss VDS 10V f 1.0MHz VGS 0V Crss ... td (on) ID 25A VDD 12V RL 0.48W VGS 10V tr td (off) tf ... VSD ISD 50A, VGS 0V 9 11 pF pF pF 2700 1100 500 20 600 300 100 1.0 1.5 VGSS ... V V +20, -10 60 180 ID A ID (pulse)* A 35 (Tc ... =25 C) PD Tch W 150 Tstg C C -55 to +150 ... VGS -10V -5 MOS FET FKV560 95 a) Part No. b) Lot No. (Unit: mm) ... External Dimensions TO220F (full-mold) G D S a b 3.3 0.2 10.0 0.2 1.35 0.15 1 ...
Symbol Ratings Unit (Ta=25 C) (Ta=25 C) VDSS 50 Symbol Test Conditions ... VGS 0V 50 min typ max IGSS m A m A VGS +20V +10 IDSS S V VDS 50V, VGS 0V 100 VTH ... VDS 10V, ID 250m A 2.0 1.0 Re (yfs) VDS 10V, ID 25A 20.0 RDS ... (ON) mW V ns ns ns ns V VGS 10V, ID 25A Coss Ciss VDS 10V f 1.0MHz VGS 0V Crss ... td (on) ID 25A VDD 12V RL 0.48W VGS 10V tr td (off) tf ... VSD ISD 50A, VGS 0V 9 11 pF pF pF 2000 1000 150 1.0 1.5 To be defined VGSS V ... V 20 45 135 ID A ID (pulse)* A 60 (Tc=25 ... Tch W 150 Tstg C C -55 to +150 VGS -20V -5 MOS FET FKV560S 96 External ... Dimensions TO220S a b 10.2 0.3 1.27 0.2 2.54 0.5 2.54 0.5 1.2 0.2 1.6 0.86 4.44 0.2 ...
Symbol Ratings Unit (Ta=25 C) (Ta=25 C) VDSS 60 Symbol Test Conditions ... VGS 0V 60 min typ max IGSS m A m A VGS +20V +10 IDSS S V VDS 60V, VGS 0V 100 VTH ... VDS 10V, ID 250m A 2.0 1.0 Re (yfs) VDS 10V, ID 25A 20.0 RDS ( ... ON) mW V ns ns ns ns V VGS 10V, ID 25A Coss Ciss VDS 10V f 1.0MHz VGS 0V Crss ... td (on) ID 25A VDD 12V RL 0.48W VGS 10V tr td (off) tf ... VSD ISD 50A, VGS 0V 11 14 pF pF pF 2000 900 100 1.0 1.5 To be defined VGSS V ... V 20 50 150 ID A ID (pulse)* A 40 (Tc=25 ... Tch W 150 Tstg C C -55 to +150 VGS -20V -5 Absolute Maximum Ratings Electrical ... Characteristics MOS FET FKV660 (under development) 97 a) Part No. b) ... Lot No. (Unit: mm) External Dimensions FM20 (full-mold) C 0.5 G D S a b 3.3 0.2 10. ...
Symbol Ratings Unit (Ta=25 C) (Ta=25 C) VDSS 60 Symbol Test Conditions ... VGS=0V 60 min typ max IGSS m A m A VGS=+20V VGS=-10V +10 - 5 IDSS S V VDS=60V, VGS= ... 0V 100 VTH VDS=10V, ID=250m A 2.5 1.0 Re (yfs) VDS=10V, ID=25A 20 RDS (ON ... ) mW V ns ns ns ns V VGS=10V, ID=25A Coss Ciss VDS=10V f=1.0MHz VGS=0V Crss ... td (on) ID=25A VDD=12V RL=0.48W VGS=10V tr td (off) tf ... VSD ISD=50A, VGS=0V 11 14 pF pF pF 2500 900 150 50 400 400 300 1.0 1.5 VGSS V ... V +20, -10 60 180 ID A ID(pulse) A 60(Tc=25 ... PD Tch W 150 Tstg C C -40 to +150 MOS FET FKV660S 98 External Dimensions TO220S a ... b 10.2 0.3 1.27 0.2 2.54 0.5 2.54 0.5 1.2 0.2 1.6 0.86 -0.1 +0.2 4.44 0.2 ...
0 1 2 5 3 4 6 n ID VDS Characteristics 0 ... 12 VDS (V) 8 4 16 0 8 6 4 2 10 0 1.0 2.0 3.0 4.0 n ID VGS Characteristics VGS ... (V) 0 2 4 8 6 10 n RDS (ON) ID ... 0 0.10 0.05 ID (A) 0.30 0.25 0.20 0.15 -50 0 50 100 150 n RDS (ON) TC ... Characteristics 0 0.10 0.30 0.20 0.40 Tc C) 0.45 0 10 20 30 40 50 n ... 100 500 VDS (V) 1000 1 5 10 50 100 200 n Safe Operating Area (single pulse) 0. ... 5 0.1 10 1 5 VDS (V) 20 (Ta 25 C) 0.05 0.1 0.5 1 5 10 n Re (yfs) ... .5V VGS 10V VGS 4V ID 4A VGS 10V VGS 0V f 1MHz Coss Ciss Crss VDS 10V 0 0.4 0.2 ... 0.6 0.8 1.2 1.0 n IDR VSD Characteristics 0 5 4 3 2 ... 1 VSD (V) 6 VGS 4V VGS 10V Ta -55 C 25 C 75 C 150 C ID (pulse) max ID (DC) max ... Ta -55 C 25 C 75 C 150 C Ta 150 C 75 C 25 C -55 C VGS 0V Symbol Ratings Unit (Ta= ...
0 2 4 10 12 6 8 14 n ID VDS ... Characteristics 0 5 4 VDS (V) 3 2 1 6 0.01 1 0.1 20 10 0 1 2 3 4 5 ... n ID VGS Characteristics VGS (V) 0 1 2 3 6 4 5 n RDS (ON) ID ... Characteristics 0 0.2 ID (A) 0.8 0.6 0.4 -50 0 50 100 150 ... RDS (ON) TC Characteristics 0 0.1 0.3 0.2 0.4 Tc C) 0.5 0.5 1 5 10 50 n Safe ... pulse) 0.5 0.1 1 5 VDS (V) 10 (Tc 25 C) 0.05 0.1 0.5 1 6 n Re (yfs) ID ... Characteristics 0.2 0.5 1 5 10 ID (A) VGS 3V VGS 4V VGS 5V ... typ. VDS 10V VDS 10V VGS 4V 0 0.4 0.2 0.6 0.8 1.4 1.2 1.0 n IDR VSD ... Characteristics 0 8 6 4 2 VSD (V) 10 Ta -55 C 25 C 75 C 150 C ID ... (pulse) max Ta -55 C 25 C 150 C Ta 150 C 75 C 25 C -55 C 25 C ... C 75 C -55 C Symbol Ratings Unit (Ta=25 C) (Ta=25 C) VDSS 52± 5 Symbol Test ...
Characteristics 0 5 10 15 20 n ID VDS Characteristics 0 5 6 VDS (V) ... 4 3 2 1 7 0 5 6 4 3 2 1 7 0 2 4 6 8 10 n ID VGS Characteristics ... VGS (V) 0 1 2 3 4 5 6 7 n RDS (ON) ID ... n RDS (ON) TC Characteristics 0 1.0 0.5 2.0 1.5 Tc C) 2.5 0 10 20 30 40 50 n ... Capacitance VDS Characteristics 20 50 100 500 VDS (V) 1000 3 5 10 50 ... ) 0.5 0.1 0.05 10 1 5 VDS (V) 50 (Ta 25 C) 0.05 0.1 0.5 1 7 n Re (yfs) ID ... Characteristics 2 5 10 50 ID (A) 100 5.5V 5V VGS 4.5V ID ... 3.5A VDS 20V VGS 10V VGS 0V f 1MHz Coss Ciss Crss VDS 20V 0 0.4 0.2 ... 1.0 n IDR VSD Characteristics 0 5 4 3 2 1 6 VSD (V) 7 VGS 0V VGS 10V Ta -55 C ... 25 C 150 C ID (pulse) max ID (DC) max 10V ... Ta -55 C 25 C 150 C Symbol Ratings Unit (Ta=25 C) ( ...
0 1 2 3 4 5 6 n ID VDS Characteristics 0 ... 4 8 VDS (V) 6 2 10 0 1 2 3 4 n ID VGS Characteristics 0 4 6 10 ... VGS (V) 8 2 12 0.1 1 10 20 n RDS (ON) ID Characteristics 0 0.05 ID ... Characteristics 50 500 100 1000 VDS (V) 2000 0.5 1 5 10 100 50 n Safe Operating ... single pulse) 0.5 10 1 5 VDS (V) 50 (Ta 25 C) 0.4 1 5 10 20 n Re (yfs) ID ... Characteristics 2 5 10 ID (A) 30 4V 5V 10V VGS 3V VGS 4V ... VDS 10V VGS 10V VGS 0V f 1MHz Coss Ciss Crss VDS 10V 0 0.4 0.8 ... 1.2 n IDR VSD Characteristics 0.1 5 10 VSD ... (V) 1 0.5 20 VGS 0V VGS 4V VGS 10V Ta 150 C 75 C 25 ... max ID (DC) max Symbol Ratings Unit (Ta=25 C) (Ta=25 C) VDSS 60 Symbol Test ... VGS 0V 60 min typ max IGSS m A m A VGS 20V 100 IDSS S V VDS 60V, VGS 0V 100 VTH ...
Symbol Ratings Unit (Ta=25 C) (Ta=25 C) VDSS 52± 5 Symbol Test Conditions ... 47 52 57 min typ max IGSS m A m A VGS 20V 1.0 IDSS S V VDS 40V, VGS 0V 100 VTH ... VDS 10V, ID 250m A 2.5 1.8 1.0 Re (yfs) VDS 10V, ID 1.0A 1.0 ... 1.0A VGS 4V, ID 1.0A Coss Ciss VDS 10V f 1.0MHz VGS 0V Crss td (on) ID 1A VDD ... tr td (off) tf VSD ISD 1A, VGS 0V 0.2 0.25 0.25 0.3 pF pF pF 200 120 20 ... 2.0 7.4 3.3 4.2 1.0 1.5 VGSS V V 20 3 6 ID A ID (pulse) 1 A 3 (Tc=25 C, 4 ... circuits operate) PT EAS 2 Tch W 150 40 Tstg C C mJ -55 to + ... 150 *1 PW 100m s, duty 1% *2 VDD 12V, L 10mH, unclamped, RG 10W 2 1 ... 6 5 11 12 8 7 9 10 Surface-mount MOS FET Array SDK06 103 Equivalent Circuit ...
Symbol Ratings Unit (Ta=25 C) (Ta=25 C) VDSS 50 Symbol Test Conditions ... , VGS 0V 50 min typ max IGSS nA m A VGS 20V 100 IDSS S V VDS 50V, VGS 0V 100 VTH ... VDS 10V, ID 1mA 2.3 13.0 1.8 9.0 1.3 Re (yfs) VDS 10V, ID ... 4.0A VGS 4V, ID 4.0A Coss Ciss VDS 10V f 1.0MHz VGS 0V Crss td (on) ID 4A VDD ... 50 80 60 40 1.0 1.5 VGSS V V 20 4.5 9 ID A ID (pulse) 1 A 4 (Tc=25 C ... , 4 circuits operate) PT EAS 2 Tch W 150 80 Tstg C C mJ -55 to + ... 150 *1 PW 100m s, duty 1% *2 VDD 12V, L 10mH, unclamped, RG 50W ... Electrical Characteristics 1 15 16 2 3 13 14 4 5 11 12 6 7 9 10 8 Surface ... -mount MOS FET Array SDK08 104 Equivalent Circuit ... a) Part No. b) Lot No. (Unit: mm) a b 20.0max 2.54 0.25 0.89 0.15 0.25 19.56 0.2 0.75 ...
Symbol Ratings Unit (Ta=25 C) (Ta=25 C) VDSS 120 Symbol Test Conditions ... =0V 120 min typ max IGSS m A m A VGS=± 20V 5 IDSS S V VDS=120V, VGS=0V 100 VTH ... VDS=10V, ID=250m A 2.0 1.0 Re (yfs) VDS=10V, ID=4A 5.0 RDS (ON ... , ID=4A VGS=4V, ID=4A Coss Ciss VDS=10V f=1.0MHz VGS=0V Crss td (on) ID=4A VDD=12V RL=3W ... td (off) tf VSD ISD=6A, VGS=0V 0.15 0.2 0.2 0.25 pF pF pF 400 130 30 100 ... 300 250 200 1.0 1.5 VGSS V V 20 6 10 ID A ID (pulse)* 1 A 3 (Tc=25 C ... W 150 Tstg C C -55 to +150 80 EAS 2 mJ Absolute Maximum Ratings Electrical ... Characteristics 1 15 16 2 3 13 14 4 5 11 12 6 7 9 10 8 Surface ... -mount MOS FET Array SDK09 (under development) 105 ... a) Part No. b) Lot No. (Unit: mm) a b 20.0max 2.54 0.25 0.89 0.15 0.25 19.56 0.2 0.75 ...
) Thyristor with built-in reverse diode for HID lamp ignition TFC561D 106 Features ... =1200A/m s l Gate trigger current: IGT=20mA max l With built-in reverse diode ... voltage Diode repetitive peak surge forward current Junction temperature VDRM ITRM ... 1kW A/m s W W V A C 600 430 1200 Peak forward gate current Peak gate power loss A 2.0 ... 5.0 0.5 5 240 -40 to +125 Storage temperature VD 430V ... , 100kcycle, Wp=1.3m s, Ta=125° C f 50Hz, duty 10% f 50Hz, duty 10% f 50Hz ... min typ max Unit Conditions Ratings (Tj=25 C) VTM VD=6V, RL=10W VD=6V, RL=10W IT= ... 10A 10.0 1.4 V 20 1.5 mA V VGT IGT VD=480V, Tj=125 C RG-K ... =1kW , Tj=25 C V VGD mA IH VD=VDRM, RG-K=1kW , Tj=25 ... 1.4 4.0 m A IDRM (1) Off-state current (2) Off-state current (1) Holding current ...
Amber Orange Yellow Green Pure green 2.0 1.75 1.9 1.9 1.9 2.0 2.0 2.0 1.9 1.9 1. ... 9 2.0 2.0 2.0 2.0 2.0 3.3 3.3 2.5 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 ... 2.5 2.5 2.5 4.0 4.0 5 20 20 10 10 10 20 20 20 10 10 10 20 20 20 20 20 20 700 ... GaP GaP A GaInP A GaInP InGaN InGaN 1 2 3 2.8 2.8 4.5 1000 1200 26 75 18 37 14 ... 25 22 65 32 84 50 36 75 18 37 19 34 65 30 84 ... 50 280 570 2000 600 SELU1250CM SEL1250SM SEL1250RM ... Amber Orange Yellow Green Pure green 2.0 1.9 1.9 1.9 2.0 2.0 3.3 3.3 1.75 2.0 1. ...
A B A B A B A B A B A B A B A B A B A B 2.0 2.0 1.9 2.0 1.9 2.0 2.0 2.0 1.7 2.4 1.7 ... 2.4 1.9 2.0 1.9 2.0 1.9 2.0 1.7 2.4 1.9 2.0 1.7 2.4 1.9 2.0 1.9 2.0 1.9 2.0 ... 1.9 2.0 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.2 3.0 2.2 3.0 2.5 2.5 2.5 2.5 2.5 2.5 ... 2.2 3.0 2.5 2.5 2.2 3.0 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 20 20 20 20 20 20 20 20 ... 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 700 555 ...
Yellow Green Deep green Pure green 2.0 1.7 1.9 1.9 1.9 2.0 2.0 2.0 2.0 3.3 3.3 ... 3.9 1.7 1.9 1.9 1.9 1.9 1.9 1.9 2.0 2.0 2.0 2.0 2.5 2.2 2.5 2.5 2.5 2.5 2.5 2.5 ... 2.5 4.0 4.0 4.8 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 20 20 20 20 20 20 ... 20 20 20 20 20 20 20 20 20 3 20 3 20 20 20 20 20 700 660 630 610 587 570 560 558 ... GaP GaP GaP GaP 40 41 1.5 100 10 16 13 25 22 11 8.0 150 50 6.0 150 100 15 10 20 ... GaP GaAsP InGaN GaN 30 -0.45 70 Above 25 C f=1kHz, tw=100m s 4 5 -30 to +85 -25 ...
GaAs GaAs GaAs GaAs 44 45 46 47 130 200 60 110 250 80 130 180 200 50 7.0 ... 14 (Constant voltage) VCC=3V, R=2.2W Parameter Unit Ratings mA mA/ C mA V C ... C IF D IF IFP VR Top Tstg Ratings Above 25 C f=1kHz, tw=10m s 150 -1.33 1000 5 -30 ... to +85 -30 to +100 (Ta=25 C) Absolute Maximum Ratings Infrared ... nm) Electro-optical characteristics (Ta=25 C) Chip material ...
