100m s, duty 1% ns Di, trr IF 25A, di/dt 100A/m s 110 0 6 4 10 180 20 0 Drain- ... ID (A) 5 10 100 30 10 VGS=3.5V 25 C 125 C VDS=10V -55 C ID=25A 0 10 20 30 40 50 ...
rate-of-rise of on-state current: di/dt=1200A/m s l Gate trigger current: IGT=20mA ... Junction temperature VDRM ITRM di/dt IFGM PGM PG (AV) VRGM IFRM Tj Tstg V A ... Tj=-40 to +125° C, RGK=1kW A/m s W W V A C 600 430 ... loss A 2.0 5.0 0.5 5 240 -40 to +125 Storage temperature VD 430V, 100kcycle ... , Wp=1.3m s, Ta=125° C f 50Hz, duty 10% f 50Hz, duty 10% f ... 50Hz VD 430V, 100kcycle, Wp=1.3m s, Ta=125° C C -40 to +125 Electrical ... 0 1.4 V 20 1.5 mA V VGT IGT VD=480V, Tj=125 C RG-K=1kW , Tj=25 C V VGD mA IH VD= ... -K=1kW , Tj=25 C VD=VDRM, RG-K=1kW , Tj=125 C Junction to case IF=10A 100 1 1.4 4. ... junction temperature of the device to 125° C. This process shall be repeated up to ...